GBL02-E3/51 Vishay, GBL02-E3/51 Datasheet - Page 3

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GBL02-E3/51

Manufacturer Part Number
GBL02-E3/51
Description
DIODE GPP 1PH 4A 200V GBL
Manufacturer
Vishay
Datasheet

Specifications of GBL02-E3/51

Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
3A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBL)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
150 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
20.9 mm
Width
3.56 mm
Height
10.7 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
GBL02-E3/45

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GBL02-E3/51
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88609
Revision: 30-Apr-08
Figure 3. Typical Forward Voltage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
50 - 400 V
60 - 1000 V
20
0.8
40
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
1.0
For technical questions within your region, please contact one of the following:
T
A
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.125 (3.17) x 45°
J
= 125 °C
= 25 °C
1.2
Chamfer
0.040 (1.02)
0.030 (0.76)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
0.050 (1.27)
0.040 (1.02)
T
Polarity shown on front side of case, positive lead beveled corner
0.080 (2.03)
0.060 (1.50)
A
80
= 25 °C
1.4
100
1.6
Case Type GBL
0.026 (0.66)
0.020 (0.51)
0.210 (5.3)
0.190 (4.8)
0.825 (20.9)
0.815 (20.7)
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0.022 (0.56)
0.018 (0.46)
Lead Depth
Vishay General Semiconductor
0.098 (2.5)
0.075 (1.9)
0.140 (3.56)
0.128 (3.25)
50 - 400 V
600 - 1000 V
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
0.1
GBL005 thru GBL10
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3

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