GBU8D-E3/45 Vishay, GBU8D-E3/45 Datasheet - Page 3
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GBU8D-E3/45
Manufacturer Part Number
GBU8D-E3/45
Description
DIODE GPP 8A 200V GPP INLINE GBU
Manufacturer
Vishay
Datasheet
1.GBU8A-E351.pdf
(4 pages)
Specifications of GBU8D-E3/45
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
3.9A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBU)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
200 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
3.56 mm
Height
18.8 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
8A
Forward Voltage Vf Max
1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +150°C
Bridge
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
GBU8D-E3/51
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88616
Revision: 15-Dec-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Percent of Rated Peak Reverse Voltage (%)
J
= 150 °C
0.6
50 - 400 V
600 - 1000 V
Instantaneous Forward Voltage (V)
20
T
J
= 125 °C
0.8
40
T
0.020 R (TYP.)
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.100 (2.54)
0.085 (2.16)
= 25 °C
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
For technical questions within your region, please contact one of the following:
1.0
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead by beveled corner
J
= 25 °C
1.2
80
1.4
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
1.6
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Type GBU
0.050 (1.27)
0.040 (1.02)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
50 - 400 V
600 - 1000 V
0.140 (3.56)
0.130 (3.30)
0.1
GBU8A thru GBU8M
Reverse Voltage (V)
t - Heating Time (s)
1
0.026 (0.66)
0.020 (0.51)
0.085 (2.16)
0.075 (1.90)
9° TYP.
5° TYP.
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3