2KBP02M-E4/51 Vishay, 2KBP02M-E4/51 Datasheet - Page 3
![RECTIFIER BRIDGE 2A 200V KBPM](/photos/5/21/52187/2kbp10m_sml.jpg)
2KBP02M-E4/51
Manufacturer Part Number
2KBP02M-E4/51
Description
RECTIFIER BRIDGE 2A 200V KBPM
Manufacturer
Vishay
Datasheet
1.3N253-E445.pdf
(4 pages)
Specifications of 2KBP02M-E4/51
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
2A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (KBPM)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
60 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 165 C
Length
15.24 mm
Width
5.08 mm
Height
11.68 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2KBP02M-E4/1
2KBP02M-E4/1
2KBP02M-E4/1GI
2KBP02M-E4/1GI
2KBP02M-E4/1TR
2KBP02M-E4/1TR
2KBP02M-E4/51GI
2KBP02M-E4/1
2KBP02M-E4/1GI
2KBP02M-E4/1GI
2KBP02M-E4/1TR
2KBP02M-E4/1TR
2KBP02M-E4/51GI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3