KBU8M-E4/51 Vishay, KBU8M-E4/51 Datasheet - Page 3

• Manufacturer Part Number: KBU8M-E4/51
• Description: RECTIFIER BRIDGE 8A 1000V KBU
• Manufacturer: Vishay

Specifications of KBU8M-E4/51

• Lead Free Status: Contains lead
• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 6A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBU)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 1000 V
• Maximum Rms Reverse Voltage: 700 V
• Max Surge Current: 300 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Length: 23.7 mm
• Width: 7.1 mm
• Height: 19.3 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: KBU8M; KBU8M; KBU8M/1; KBU8M/1

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88658
Revision: 15-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
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T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
1.0
60
T
T
J
J
= 100 °C
1.1
= 25 °C
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
1000
100
10
0.052 (1.3)
0.048 (1.2)
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.165 (4.2)
0.185 (4.7)
1
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU8A thru KBU8M
Reverse Voltage (V)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3