KBU8D-E4/51 Vishay, KBU8D-E4/51 Datasheet - Page 3

• Manufacturer Part Number: KBU8D-E4/51
• Description: DIODE 8A 200V KBU
• Manufacturer: Vishay

Specifications of KBU8D-E4/51

• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 6A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBU)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 300 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Length: 23.7 mm
• Width: 7.1 mm
• Height: 19.3 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 300A
• Avg. Forward Curr (max): 8A
• Rev Curr: 10uA
• Forward Voltage: 1V
• Package Type: Case KBU
• Operating Temp Range: -50C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88658
Revision: 15-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
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T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
1.0
60
T
T
J
J
= 100 °C
1.1
= 25 °C
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
1000
100
10
0.052 (1.3)
0.048 (1.2)
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.165 (4.2)
0.185 (4.7)
1
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU8A thru KBU8M
Reverse Voltage (V)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3