KBU8D-E4/51 Vishay, KBU8D-E4/51 Datasheet - Page 3
![DIODE 8A 200V KBU](/photos/16/3/160394/kbu_sml.jpg)
KBU8D-E4/51
Manufacturer Part Number
KBU8D-E4/51
Description
DIODE 8A 200V KBU
Manufacturer
Vishay
Datasheet
1.KBU8B-E451.pdf
(4 pages)
Specifications of KBU8D-E4/51
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
6A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (KBU)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
300 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 150 C
Length
23.7 mm
Width
7.1 mm
Height
19.3 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
8A
Forward Voltage Vf Max
1V
Diode Mounting Type
Through Hole
Operating Temperature Range
-55°C To +150°C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
300A
Avg. Forward Curr (max)
8A
Rev Curr
10uA
Forward Voltage
1V
Package Type
Case KBU
Operating Temp Range
-50C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KBU8D-E4/51
Manufacturer:
VISHAY
Quantity:
12 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88658
Revision: 15-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
1.0
60
T
T
J
J
= 100 °C
1.1
= 25 °C
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
1000
100
10
0.052 (1.3)
0.048 (1.2)
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.165 (4.2)
0.185 (4.7)
1
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU8A thru KBU8M
Reverse Voltage (V)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3