MB10M-G Comchip Technology, MB10M-G Datasheet - Page 2

• Manufacturer Part Number: MB10M-G
• Description: BRIDGE DIODE GPP 0.8A 1000V MBM
• Manufacturer: Comchip Technology

Specifications of MB10M-G

• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 800mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: MBM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

100
0.01
1.0
10
0.1
Silicon Bridge Rectifiers
0.6
0.4
1.0
0.8
0.2
0.1
MDS0912009A
0
20
PERCENT OF RATED PEAK REVERSE VOLTAGE，(%)
MOUNTED ON BOARD
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.3-TYPICAL REVERSE CHARACTERISTICS
20
40
RATINGS AND CHARACTERISTIC CURVES MB05M-G thru MB10M-G
AMBIENT TEMPERATURE, ℃
40
60
T
T
J
=125°C
J
=25°C
60
80
100
10
1.0
1
80
100
TJ=25°C，f=1MHZ
100
120
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE， VOLTS
120
140
4
140
160
10
0.01
0.1
1.0
10
30
20
10
40
0
0
1
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4-TYPICAL FORWARD CHARACTERISTICS
0.2
2
FIG.2-MAXIMUM NON-REPETITVE
0.4
NUMBER OF CYCLES AT 60H
100
0.6
SURGE CURRENT
5
0.8
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
10
T
PULSE WIDTH:300us
2% DUTY CYCLE
J=
1.0
25°C
20
1.2
Z
1.4
50
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1.6
100
1.8