DF02S/77 Vishay, DF02S/77 Datasheet - Page 3

• Manufacturer Part Number: DF02S/77
• Description: RECTIFIER BRIDGE 1AMP 200V DFS
• Manufacturer: Vishay

Specifications of DF02S/77

• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (DFS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 50 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: DF02S/27; DF02S/27GITR; DF02S/27GITR; DF02S/54; DF02S/54GITR; DF02S/54GITR; DF02S/77GITR; DF02SGI TR; DF02SGITR; DF02SGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88573
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
0.320 (8.13)
0.335 (8.51)
0.205 (5.2)
T
0.195 (5.0)
= 125 °C
J
0.8
40
= 50 °C
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T
Pulse Width = 300 µs
1 % Duty Cycle
Case Style DFS
1.0
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
DF005S thru DF10S
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3