MKP3V120G ON Semiconductor, MKP3V120G Datasheet - Page 4

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MKP3V120G

Manufacturer Part Number
MKP3V120G
Description
SIDAC BIDIR TRIGGER 1A DO-201AD
Manufacturer
ON Semiconductor
Datasheet

Specifications of MKP3V120G

Current - Peak Output
1A
Voltage - Breakover
110 ~ 130V
Current - Hold (ih) (max)
100mA
Current - Breakover
200µA
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
100
0.05
0.03
0.02
0.01
90
80
70
60
50
40
30
20
10
1.0
0.5
0.3
0.2
0.1
0
-60
0.2
-40
Z
DT
where:
DT
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t
transient resistance at time t
qJL
p
) = normalized value of
JL
JL
Figure 6. Typical Breakover Current
(t) = R
= P
= the increase in junction temperature above the
-20
0.5
pk
qJL
T
R
J
qJL
, JUNCTION TEMPERATURE ( C)
0
r(t)
[r(t)]
1.0
20
2.0
p
.
40
t
p
60
5.0
80
THERMAL CHARACTERISTICS
TIME
TYPICAL CHARACTERISTICS
10
MKP3V120, MKP3V240
100
Figure 5. Thermal Response
http://onsemi.com
120
20
140
t, TIME (ms)
4
50
250
225
200
175
150
125
100
75
50
25
0
100
-60
-40
200
Figure 7. Typical Holding Current
-20
T
J
500
, JUNCTION TEMPERATURE ( C)
0
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of T
temperature may be determined by:
The temperature of the lead should be
20
1.0 k
40
2.0 k
T
J
60
= T
L
+ DT
LEAD LENGTH =
80
5.0 k
JL
L
, the junction
100
10 k
120
1
/
4
20 k
140

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