TGS2302 TriQuint, TGS2302 Datasheet
TGS2302
Specifications of TGS2302
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TGS2302 Summary of contents
Page 1
... Primary Applications • • • Product Description The TriQuint TGS2302 is a 4-20 GHz Single Pole Double Throw (SPDT) Switch. This part is designed using TriQuint’s proven standard VPIN production process. The TGS2302 provides a nominal 0.9 dB insertion loss return loss, and 35 dB isolation ...
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... Isolated * Typical DC voltage to achieve ± Icontrol node is 2.6-2.7 V TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS Parameter 1/ are both per bias pad. TABLE II FUNCTION TABLE RF-A RF-B Isolated Low-Loss TGS2302 Value + dBm 0. 320 C 0 -65 to 150 C Icontrol-A* ...
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... A Icontrol = ± 20mA THROUGH PATH IDENTIFICATION RF Input to RF Output A RF Input to RF Output B RF Input to RF Output A RF Input to RF Output B RF Input to RF Output A RF Input to RF Output B TGS2302 TEST NOMINAL CONDITION – 20 GHz 0 – 20 GHz – 20 GHz – 20 GHz ...
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... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Fixtured Data Bias Conditions: Icontrol =± Frequency (GHz Frequency (GHz) TGS2302 May 2008 ...
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... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Fixtured Data Bias Conditions: Icontrol =± Frequency (GHz Input Power (dBm) TGS2302 Input Output GHz 8 GHz 12 GHz May 2008 ...
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... Icontrol A RF output A TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Equivalent Schematic RF Input TGS2302 Icontrol B RF Output B 6 May 2008 ...
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... Output A) 0.193 x 0.243 (0.008 x 0.010) (RF Input) 0.243 x 0.193 (0.010 x 0.008) (Icontrol-A) 0.105 x 0.132 (0.004 x 0.005) (Icontrol-B) 0.105 x 0.132 (0.004 x 0.005) (RF Output B) 0.193 x 0.243 (0.008 x 0.010) TGS2302 2.106 [0.082] 3 1.478 [0.058] 4 0.975 [0.038] 5 0.676 [0.026] 2.062 [0.080] 2.240 [0.087] 7 May 2008 ...
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... Icontrol-B) use on-chip resistors for diode current control. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Drawing Icontrol-A TQS 2006 RF Output B TGS2302 Icontrol-B 8 May 2008 ...
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... Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes TGS2302 9 May 2008 ...