BZB84-B16,215 NXP Semiconductors, BZB84-B16,215 Datasheet - Page 6

• Manufacturer Part Number: BZB84-B16,215
• Description: DIODE ZENER DL 16V 300MW SOT23-3
• Manufacturer: NXP Semiconductors

Specifications of BZB84-B16,215

• Voltage - Zener (nom) (vz): 16V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 11.2V
• Configuration: 1 Pair Common Anode
• Power - Max: 300mW
• Impedance (max) (zzt): 40 Ohm
• Tolerance: ±2%
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063346215

NXP Semiconductors
Table 9.
T
[1]
[2]
BZB84_SER_3
Product data sheet
BZB84-
Bxxx
27
30
33
36
39
43
47
51
56
62
68
75
j
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
= 100 s; square wave; T
Working voltage
V
I
Min
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
Z
Characteristics per type; BZB84-B27 to BZB84-B75
Z
= 2 mA
(V)
R
= 0 V
Max
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
j
= 25 C prior to surge
Differential
resistance
r
I
Max
300
300
325
350
350
375
375
400
425
450
475
500
Z
dif
= 0.5 mA I
( )
Max
80
80
80
90
130
150
170
180
200
215
240
255
Z
= 2 mA
Rev. 03 — 9 June 2009
Reverse current
I
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
R
( A)
V
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
R
(V)
Temperature
coefficient
S
I
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Z
Z
= 2 mA
(mV/K)
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
Diode
capacitance
C
Max
50
50
45
45
45
40
40
40
40
35
35
35
BZB84 series
d
(pF)
[1]
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
1.00
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.30
0.25
0.20
ZSM
(A)
[2]
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