1N5311 Central Semiconductor, 1N5311 Datasheet

Current Regulator Diodes 3.6mA Curr Reg

1N5311

Manufacturer Part Number
1N5311
Description
Current Regulator Diodes 3.6mA Curr Reg
Manufacturer
Central Semiconductor
Datasheet

Specifications of 1N5311

Maximum Regulator Current
3.96 mA
Maximum Limiting Voltage
2.5 V
Maximum Peak Operating Voltage
100 V
Minimum Dynamic Impedance
0.265 MOhms
Minimum Knee Impedance
0.02 MOhms
Configuration
Single
Mounting Style
Through Hole
Package / Case
DO-35
Limiting Voltage (max)
2.5V
Peak Operating Voltage (max)
100V
Knee Impedance (min)
20kohm
Operating Temperature Classification
Military
Operating Temperature (min)
-65C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5311-1JANTX
Manufacturer:
Microsemi
Quantity:
1 400
ELECTRICAL CHARACTERISTICS: (T A =25°C)
Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by I P NOM (mA)
FEATURES:
• High Reliability
• Special Selections Available
MAXIMUM RATINGS: (T L =75°C)
Peak Operating Voltage
Power Dissipation
Operating and Storage Junction Temperature
SILICON CURRENT LIMITING DIODE
1N5283
1N5284
1N5285
1N5286
1N5287
1N5288
1N5289
1N5290
1N5291
1N5292
1N5293
1N5294
1N5295
1N5296
1N5297
1N5298
Type
1N5283 THRU 1N5314
DO-35 CASE
0.198
0.216
0.243
0.270
0.297
0.351
0.387
0.423
0.504
0.558
0.612
0.675
0.738
0.819
0.900
0.990
MIN
mA
I P @ V T =25V
Regulator
(Note 1)
Current
NOM
0.22
0.24
0.27
0.30
0.33
0.39
0.43
0.47
0.56
0.62
0.68
0.75
0.82
0.91
1.00
1.10
mA
0.242
0.264
0.297
0.330
0.363
0.429
0.473
0.517
0.616
0.682
0.748
0.825
0.902
1.001
MAX
1.10
1.21
mA
• Superior Lot To Lot Consistency
• Surface Mount Devices Available
Z T @ V T =25V
Impedance
Minimum
Dynamic
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5283 series
types are silicon field effect current regulator diodes
designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the cost effective DO-35 double
plug case which provides many benefits to the
user, including space savings and improved thermal
characteristics. Special selections of I P (regulator
current) are available for critical applications.
SYMBOL
T J , T stg
1.90
1.55
1.35
1.15
1.00
0.88
0.80
0.70
9.0
6.6
4.1
3.3
2.7
P OV
25
19
14
P D
Z K @ V K =6.0V
Impedance
Minimum
-65 to +200
Knee
0.335
0.205
2.75
2.35
1.95
1.60
1.35
1.00
0.87
0.75
0.56
0.47
0.40
0.29
0.24
0.18
100
600
w w w. c e n t r a l s e m i . c o m
V L @ I L =0.8 x I P MIN
R3 (24-May 2010)
UNITS
Maximum
Limiting
Voltage
mW
°C
V
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
1.0
1.0
1.0
1.0
1.0
V

Related parts for 1N5311

1N5311 Summary of contents

Page 1

... Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided NOM (mA) DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5283 series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost effective DO-35 double ...

Page 2

... DO-35 CASE - MECHANICAL OUTLINE Minimum Minimum Dynamic Knee Impedance Impedance =25V ...

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