MJ11033 ON Semiconductor, MJ11033 Datasheet
MJ11033
Manufacturer Part Number
MJ11033
Description
Darlington Transistors 50A 120V Bipolar
Manufacturer
ON Semiconductor
Datasheet
1.MJ11029.pdf
(4 pages)
Specifications of MJ11033
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-204-2 (TO-3)
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
120 V
Maximum Dc Collector Current
50 A
Power Dissipation
0.3 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
50 A
Dc Collector/base Gain Hfe Min
400, 1000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJ11033G
Manufacturer:
ON
Quantity:
2 000
Part Number:
MJ11033G
Manufacturer:
NUVOTON
Quantity:
20 000
Î Î Î Î Î Î Î Î Î Î Î Î
Î Î Î Î Î Î Î Î Î Î Î Î
Î Î Î Î Î Î Î Î Î Î Î Î
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
as output devices in complementary general purpose amplifier
applications.
Features
•
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Base Current − Continuous
Total Power Dissipation @ T
Derate Above 25°C @ T
Operating and Storage Junction
Temperature Range
Maximum Lead Temperature for
Soldering Purposes for v 10 seconds
Thermal Resistance, Junction−to−Case
Collector Current − Continuous
High−Current Complementary Silicon Power Transistors are for use
High DC Current Gain − h
Curves to 100 A (Pulsed)
Diode Protection to Rated I
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
Junction Temperature to + 200_C
Pb−Free Packages are Available*
Characteristic
Rating
− Peak (Note 1)
C
(T
= 100_C
J
C
= 25°C unless otherwise noted)
= 25°C
h
MJ11028/29
MJ11032/33
MJ11028/29
MJ11032/33
FE
FE
C
MJ11030
MJ11030
= 1000 (Min) @ I
= 400 (Min) @ I
Î Î Î
Î Î Î
Î Î Î
Symbol
Symbol
T
V
V
V
R
J
P
CEO
CBO
EBO
, T
T
I
I
qJC
C
B
D
L
stg
Î Î Î Î Î
Î Î Î Î Î
Î Î Î Î Î
C
C
= 50 Adc
− 55 to +200
= 25 Adc
Value
1.71
Max
0.58
120
120
100
300
275
5.0
2.0
60
90
60
90
50
1
Î Î
Î Î
Î Î
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
BASE
1
TO−204 (TO−3)
MJ110xx = Device Code
G
A
YY
WW
MEX
DARLINGTON POWER
CASE 197A
ORDERING INFORMATION
STYLE 1
COMPLEMENTARY
COLLECTOR
CASE
EMITTER 2
2
MJ11028
MJ11030
MJ11032
60 − 120 VOLTS
TRANSISTORS
NPN
http://onsemi.com
1
50 AMPERE
300 WATTS
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
xx = 28, 29, 30, 32, 33
Publication Order Number:
BASE
1
MARKING
DIAGRAM
MJ110xxG
AYYWW
COLLECTOR
CASE
MEX
EMITTER 2
MJ11029
MJ11033
PNP
MJ11028/D
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MJ11033 Summary of contents
Page 1
... MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − 1000 (Min 400 (Min • Curves to 100 A (Pulsed) • ...
Page 2
... MJ11030 MJ11032 BASE ≈ 25 EMITTER Figure 1. Darlington Circuit Schematic (T = 25_C unless otherwise noted) C MJ11028, MJ11029 MJ11030 MJ11032, MJ11033 MJ11028, MJ11029 MJ11030 MJ11032, MJ11033 MJ11028, MJ11029 MJ11032, MJ11033 http://onsemi.com 2 COLLECTOR ≈ 3.0 k ≈ 25 EMITTER Symbol Min Max V 60 − (BR)CEO 90 − ...
Page 3
... MJ11028, MJ11030, MJ11032 NPN 25° (PULSED 100 1 2 http://onsemi.com 3 Shipping 100 Units / Tray = 200_C; T J(pk) MJ11029, MJ11033 PNP V BE(sat) = 100 80 ms (PULSED) CE(sat COLLECTOR CURRENT (AMP) C Figure 4. “On” Voltage − 100 ...
Page 4
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...