BD651 Bourns Inc., BD651 Datasheet - Page 3

• Manufacturer Part Number: BD651
• Description: Darlington Transistors 62.5W NPN Silicon
• Manufacturer: Bourns Inc.

Specifications of BD651

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Package / Case: TO-220
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 140 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 750
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
50000
10000
R O D U C T
1000
100
0·5
V
t
p
CE
=
= 300 µs, duty cycle < 2%
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
3 V
1·0
I
C
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
3·0
2·5
2·0
1·5
1·0
0·5
0·5
BASE-EMITTER SATURATION VOLTAGE
T
T
T
I
t
C
C
C
B
TYPICAL CHARACTERISTICS
p
= -40°C
= 25°C
= 100°C
= I
= 300 µs, duty cycle < 2%
T
T
T
C
C
C
C
= -40°C
= 25°C
= 100°C
/ 100
TCS130AD
COLLECTOR CURRENT
1·0
I
C
- Collector Current - A
10
Figure 3.
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
2·0
1·5
1·0
0·5
0·5
t
I
NPN SILICON POWER DARLINGTONS
B
p
= I
= 300 µs, duty cycle < 2%
C
/ 100
TCS130AC
COLLECTOR CURRENT
1·0
I
BD645, BD647, BD649, BD651
C
- Collector Current - A
10
Figure 2.
vs
T
T
T
C
C
C
= -40°C
= 25°C
= 100°C
TCS130AB
10
3