NSBA143TDXV6T5 ON Semiconductor, NSBA143TDXV6T5 Datasheet - Page 2

• Manufacturer Part Number: NSBA143TDXV6T5
• Description: Digital Transistors 100mA 50V Dual PNP
• Manufacturer: ON Semiconductor

Specifications of NSBA143TDXV6T5

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 4.7 KOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: - 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
DEVICE MARKING AND RESISTOR VALUES
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSBA114EDXV6T1 / T5
NSBA124EDXV6T1 / T5
NSBA144EDXV6T1 / T5
NSBA114YDXV6T1 / T5
NSBA114TDXV6T1 / T5
NSBA143TDXV6T1 / T5
NSBA113EDXV6T1 / T5
NSBA123EDXV6T1 / T5
NSBA143EDXV6T1 / T5
NSBA143ZDXV6T1 / T5
NSBA124XDXV6T1 / T5
NSBA123JDXV6T1 / T5
NSBA115EDXV6T1 / T5
NSBA144WDXV6T1
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
(V
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
Collector-Emitter Saturation Voltage (I
(I
(I
C
C
EB
= −10 mA, I
= −10 mA, I
= −6.0 V, I
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
B
B
C
= −5 mA)
= −1 mA)
= 0)
Device*
Characteristic
NSBA113EDXV6T1/NSBA123EDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
CB
CE
= −50 V, I
C
= −50 V, I
C
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
= −10 mA, I
= −10 mA, I
(T
A
= 25°C unless otherwise noted, common for Q
E
= 0)
B
C
= 0)
= −2.0 mA, I
NSBA144WDXV6T1
E
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA124XDXV6T1
NSBA114EDXV6T1
NSBA114YDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA143ZDXV6T1
NSBA115EDXV6T1
NSBA114TDXV6T1
NSBA123JDXV6T1
E
= 0)
= −0.3 mA)
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Package
http://onsemi.com
B
= 0)
2
V
V
Marking
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
0M
CBO
CEO
EBO
0A
0B
0C
0D
0E
0G
0H
0K
0N
0P
0F
0L
0J
1
and Q
Min
−50
−50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
R1 (kW)
)
100
4.7
1.0
2.2
4.7
4.7
2.2
10
22
47
10
10
22
47
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.18
−0.13
−0.05
−0.13
−0.25
−100
−500
Max
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.2
−
−
R2 (kW)
100
1.0
2.2
4.7
10
22
47
47
47
47
47
22
∞
∞
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc