DCX142JU-7 Diodes Inc, DCX142JU-7 Datasheet - Page 3

Digital Transistors 200MW 0.47K10K

DCX142JU-7

Manufacturer Part Number
DCX142JU-7
Description
Digital Transistors 200MW 0.47K10K
Manufacturer
Diodes Inc
Datasheet

Specifications of DCX142JU-7

Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
0.47 KOhms
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics PNP Section
Electrical Characteristics PNP Section
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
* Transistor - For Reference Only
DS30425 Rev. 5 - 2
150
250
200
100
50
0
(150mW per element must not be exceeded).
-50
T , AMBIENT TEMPERATURE ( C)
A
Characteristic
Characteristic
Fig. 1 Power Derating Curve
0
50
DCX122TU
DCX142TU
DCX122TU
DCX142TU
DCX122TU
DCX142TU
DCX122LU
DCX122LU
DCX122LU
DCX122LU
DCX142JU
DCX142JU
DCX142JU
DCX142JU
100
°
150
Symbol
Symbol
V
BV
BV
BV
V
V
V
I
I
I
CE(sat)
O(off)
h
CBO
O(on)
EBO
@T
G
l(off)
l(on)
f
f
I
FE
CBO
CEO
EBO
T
T
l
www.diodes.com
l
A
@T
= 25°C unless otherwise specified
3 of 4
A
= 25°C unless otherwise specified
Min
-0.3
-0.3
Min
100
100
-50
-40
56
56
-5
Typ
200
Typ
250
250
200
-0.3V
Max
-2.0
-2.0
-0.5
-28
-13
Max
-0.5
-0.5
-0.5
-0.3
600
600
Unit
MHz V
mA V
μA
MHz V
Unit
V
V
V
μA
μA
V
V
V
V
V
V
V
I
V
V
O
CC
O
O
I
CC
O
CE
I
I
I
I
V
V
I
I
R1, R2 Types
/I
C
C
E
E
C
C
= -5V
CB
EB
CE
l
= -0.3V, I
= -0.3V, I
= -5V, I
= -50μA
= -1mA
= -50μA
= -50μA
= -5mA, I
= -1mA, V
= -5mA/-0.25mA
= -10V, I
= -5V, I
= -50V, V
= -4V
= -50V
= -10V, I
R1 Only Types
O
O
Test Condition
O
O
= -10mA
E
B
Test Condition
= -100μA
I
CE
= -20mA
= -20mA
E
= -5mA, f = 100MHz
= -0.25mA
= 0V
= 5mA, f = 100MHz
= -5V
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DCX (LO-R1) U

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