NSBC144EDXV6T1 ON Semiconductor, NSBC144EDXV6T1 Datasheet
NSBC144EDXV6T1
Specifications of NSBC144EDXV6T1
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NSBC144EDXV6T1 Summary of contents
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... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT− ...
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... SOT−563 7G SOT−563 7H SOT−563 7J SOT−563 7K SOT−563 7L SOT−563 7M SOT−563 7N SOT−563 25°C unless otherwise noted, common for NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 = 2.0 mA http://onsemi.com 2 R1 (kW) R2 (kW ...
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... NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144EDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC143ZDXV6T1 NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 NSBC114EDXV6T1/NSBC124EDXV6T1/ NSBC144EDXV6T1/NSBC115EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1/NSBC143TDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144WDXV6T1 http://onsemi.com 3 and Q ) (Continued Symbol Min Typ Max Unit − 100 − ...
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NSBC114EDXV6T1, NSBC114EDXV6T5 300 250 200 150 100 R = 833°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 4 100 150 ...
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NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...
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NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...
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... NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 0.1 0 Figure 16. Input Voltage versus Output Current 1000 25°C 100 75° 100 MHz ...
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NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...
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... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...