MUN5213DW1T1 ON Semiconductor, MUN5213DW1T1 Datasheet

Digital Transistors 100mA 50V BRT Dual

MUN5213DW1T1

Manufacturer Part Number
MUN5213DW1T1
Description
Digital Transistors 100mA 50V BRT Dual
Manufacturer
ON Semiconductor
Datasheet
1.MUN5215DW1T1.pdf (20 pages)

Specifications of MUN5213DW1T1

Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
47 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SOT-363
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
187 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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MUN5211DW1T1G Series
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1G
series, two BRT devices are housed in the SOT−363 package which is
ideal for low power surface mount applications where board space is
at a premium.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
(T
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage Temperature
A
The Bias Resistor Transistor (BRT) contains a single transistor with
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C unless otherwise noted, common for Q
T
Junction-to-Ambient
T
Junction-to-Ambient
Junction-to-Lead
A
A
(Both Junctions Heated)
= 25°C
= 25°C
(One Junction Heated)
Characteristic
Characteristic
Rating
Preferred Devices
Symbol
Symbol
Symbol
T
V
V
R
R
R
J
P
P
CBO
CEO
, T
I
qJA
qJA
qJL
C
D
D
stg
1
and Q
187 (Note 1)
256 (Note 2)
670 (Note 1)
490 (Note 2)
250 (Note 1)
385 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
Value
Max
Max
100
2
50
50
)
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Unit
Vdc
Vdc
mW
mW
°C
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
xx
M
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
(4)
(3)
Q
1
MARKING DIAGRAM
= Device Code
= Date Code*
= Pb−Free Package
http://onsemi.com
R
6
1
2
CASE 419B
SOT−363
STYLE 1
(5)
R
xx M G
1
Publication Order Number:
R
G
(2)
1
1
MUN5211DW1T1/D
R
2
(1)
Q
(6)
2

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MUN5213DW1T1 Summary of contents

Page 1

... The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT− ...

Page 2

... DEVICE MARKING AND RESISTOR VALUES Device Package MUN5211DW1T1G SOT−363 (Pb−Free) MUN5212DW1T1G SOT−363 (Pb−Free) MUN5213DW1T1G SOT−363 (Pb−Free) MUN5214DW1T1G SOT−363 (Pb−Free) MUN5215DW1T1G SOT−363 (Pb−Free) MUN5216DW1T1G SOT−363 (Pb−Free) MUN5230DW1T1G SOT−363 (Pb−Free) MUN5231DW1T1G SOT−363 (Pb−Free) MUN5232DW1T1G SOT−363 (Pb− ...

Page 3

... Collector-Base Breakdown Voltage ( mA Collector-Emitter Breakdown Voltage (Note Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2. 25°C unless otherwise noted, common for Q A Symbol = MUN5211DW1T1G I MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G (BR)CBO = 2.0 mA (BR)CEO http://onsemi ...

Page 4

... MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5237DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G V MUN5211DW1T1G MUN5212DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5213DW1T1G MUN5236DW1T1G MUN5237DW1T1G http://onsemi.com 4 and Min Typ Max − 100 − 80 140 − 80 140 − ...

Page 5

... Q A Symbol MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5230DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5236DW1T1G MUN5237DW1T1G MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G R1/R2 ALL MUN5211DW1T1G SERIES DEVICES R = 833°C/W qJA 0 50 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1G 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1G -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

... TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1G -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 14. Output Capacitance 100 0.1 0 Figure 16. Input Voltage versus Output Current 1000 25°C 100 75° 100 MHz 25° 0.1 0.01 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1G 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1G 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat ...

Page 15

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1G 0.1 75°C −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) TBD V , REVERSE BIAS VOLTAGE ...

Page 17

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1G 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 18

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1G −25° 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 62. V versus I CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 ...

Page 19

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1G 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 67. V versus I CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 20

... SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: ...

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