BAQ33-GS08 Vishay, BAQ33-GS08 Datasheet - Page 2
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BAQ33-GS08
Manufacturer Part Number
BAQ33-GS08
Description
Diodes (General Purpose, Power, Switching) 40 Volt 200mA 2.0 Amp IFSM
Manufacturer
Vishay
Datasheet
1.BAQ33-GS08.pdf
(5 pages)
Specifications of BAQ33-GS08
Product
General Purpose Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Configuration
Single
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.001 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOD-80-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BAQ33 / 34 / 35
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
amb
94 9079
94 9078
= 25 °C, unless otherwise specified
10000
Figure 1. Reverse Current vs. Junction Temperature
1000
1000
100
100
0.1
10
10
Figure 2. Forward Current vs. Forward Voltage
1
1
Parameter
0
0
T
V
j
= 25 °C
R
Scattering Limit
T
= V
j
0.4
40
- Junction Temperature (°C)
V
RRM
F
- Forward Voltage (V)
0.8
80
Scattering Limit
120
1.2
I
E ≤ 300 lx, rated V
E ≤ 300 lx, rated V
E ≤ 300 lx, V
E ≤ 300l x, V
E ≤ 300 lx, V
I
I
V
F
R
R
R
= 100 mA
= 5 µA, t
= 5 µA, t
= 0, f = 1 MHz
160
1.6
Test condition
p
p
/T = 0.01, t
/T = 0.01, t
R
R
R
200
2.0
= 15 V
= 30 V
= 60 V
R
R
, T
p
j
p
= 125 °C
= 0.3 ms
= 0.3 ms
BAQ33
BAQ34
BAQ35
BAQ33
BAQ34
BAQ35
Part
Symbol
V
V
V
C
V
(BR)
(BR)
(BR)
I
I
I
I
I
R
R
R
R
R
F
D
140
Min
40
70
Typ.
0.5
0.5
0.5
1
Document Number 85537
Rev. 1.7, 09-Dec-05
Max
0.5
1
3
1
1
1
3
Unit
μA
nA
nA
nA
nA
pF
V
V
V
V