BAY80-TR Vishay, BAY80-TR Datasheet - Page 2

• Manufacturer Part Number: BAY80-TR
• Description: Diodes (General Purpose, Power, Switching) 150 Volt 100mA 1.0 Amp IFSM
• Manufacturer: Vishay

Specifications of BAY80-TR

• Product: General Purpose Diodes
• Peak Reverse Voltage: 150 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.07 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: DO-35-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAY80
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Differential forward resistance
Reverse recovery time
amb
amb
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9084
94 9085
Figure 2. Forward Current vs. Forward Voltage
1000
1000
0.01
Parameter
100
100
0.1
0.1
10
10
1
1
0
0
Scattering Limit
T
j
= 25 °C
T
0.4
40
j
V
- Junction Temperature (°C)
F
[e-mail], [e-mail],
- Forward Voltage (V)
For technical questions within your region, please contact one of the following:
0.8
80
Scattering Limit
I
F
120
1.2
I
V
R
= I
R
= 100 µA, t
V
R
= 120 V, T
R
V
Test condition
= 30 mA, i
I
I
I
V
R
R
t
I
I
F
F
= 0, f = 1 MHz
I
F
F
F
p
F
160
= V
1.6
R
L
= 100 mA
= 150 mA
= 0.1 mA
= 0.3 ms
= 10 mA
= 50 mA
= 10 mA
= 100 Ω
= 120 V
RRM
p
j
/T = 0.01,
200
= 150 °C
2.0
R
= 3 mA,
Symbol
V
Figure 3. Differential Forward Resistance vs. Forward Current
C
V
V
V
V
V
I
I
(BR)
t
r
R
R
rr
F
F
F
F
F
D
f
94 9089
1000
100
10
1
[e-mail]
0.1
Min.
400
630
730
780
150
I
F
- Forward Current (mA)
1
Typ.
1.5
5
10
Document Number 85553
T
Max.
1000
1070
520
780
920
100
100
j
50
= 25 °C
5
Rev. 1.9, 17-Aug-10
100
Unit
mV
mV
mV
mV
mV
nA
µA
pF
ns
Ω
V