BZV55-C12,115 NXP Semiconductors, BZV55-C12,115 Datasheet - Page 4
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BZV55-C12,115
Manufacturer Part Number
BZV55-C12,115
Description
DIODE ZENER 12V 500MW SOD80C
Manufacturer
NXP Semiconductors
Datasheet
1.BZV55-C43135.pdf
(13 pages)
Specifications of BZV55-C12,115
Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Zener (nom) (vz)
12V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
100nA @ 8V
Tolerance
±5%
Power - Max
500mW
Impedance (max) (zzt)
25 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C
Zener Voltage
12.05 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
8.4 mV / K
Power Dissipation
500 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
25 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5017-2
933699540115
BZV55-C12 T/R
BZV55-C12 T/R
BZV55-C12,115
933699540115
BZV55-C12 T/R
BZV55-C12 T/R
BZV55-C12,115
NXP Semiconductors
Table 8.
T
BZV55_SER
Product data sheet
BZV55-
xxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
j
= 25
C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZV55-B2V4 to BZV55-C24
Working
voltage
V
I
Min
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
Z
Z
= 5 mA
(V)
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
275
300
325
350
375
400
410
425
400
80
50
50
Differential resistance
r
I
Typ
40
30
30
40
40
50
Z
dif
= 1 mA
()
All information provided in this document is subject to legal disclaimers.
600
600
600
600
600
600
600
500
480
400
150
150
Max
150
80
80
80
100
150
Rev. 5 — 26 January 2011
70
75
80
85
85
85
80
50
40
15
I
Typ
6
6
6
6
6
8
10
10
Z
= 5 mA
100
100
95
95
90
90
90
80
60
40
Max
10
15
15
15
15
20
20
25
Temperature
coefficient
S
I
Min
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
Z
Z
= 5 mA
(mV/K)
Typ
1.6
2.0
2.1
2.4
2.4
2.5
2.5
1.4
0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
Diode
capacitance
C
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
d
BZV55 series
(pF)
Voltage regulator diodes
[1]
© NXP B.V. 2011. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
ZSM
(A)
[2]
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