BZX384-B51,115 NXP Semiconductors, BZX384-B51,115 Datasheet - Page 6
![DIODE ZENER 51V 300MW SOD323](/photos/5/25/52531/568-umd2_sod-323_sc-76_sod323_sml.jpg)
BZX384-B51,115
Manufacturer Part Number
BZX384-B51,115
Description
DIODE ZENER 51V 300MW SOD323
Manufacturer
NXP Semiconductors
Type
Voltage Regulatorr
Datasheet
1.BZX384-C11115.pdf
(11 pages)
Specifications of BZX384-B51,115
Package / Case
SC-76, SOD-323, UMD2
Voltage - Zener (nom) (vz)
51V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
50nA @ 35.7V
Tolerance
±2%
Power - Max
300mW
Impedance (max) (zzt)
180 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
51 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
51 mV / K
Zener Current
200 mA
Power Dissipation
300 mW
Maximum Reverse Leakage Current
50 nA
Maximum Zener Impedance
180 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Number Of Elements
Single
Package Type
SOD-323
Zener Voltage (typ)
51V
Zener Test Current
2mA
Knee Impedance
180Ohm
Operating Temperature Classification
Military
Rev Curr
50nA
Mounting
Surface Mount
Pin Count
2
Operating Temp Range
-65C to 150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3833-2
934057390115
BZX384-B51 T/R
934057390115
BZX384-B51 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZX384-B51,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Table 2 Per type BZX384-B/C27 to B/C75
T
27
30
33
36
39
43
47
51
56
62
68
75
j
BZX-
Bxxx
Cxxx
= 25 °C unless otherwise specified.
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MIN.
Tol. ±2% (B)
WORKING VOLTAGE V
at I
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
MAX.
Ztest
= 2 mA
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MIN.
Tol. ±5% (C)
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
Z
MAX.
(V)
at I
65
70
75
80
80
85
85
90
100
120
150
170
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 0.5 mA at I
300
300
325
350
350
375
375
400
425
450
475
500
MAX.
r
dif
(Ω)
25
30
35
35
40
45
50
60
70
80
90
95
TYP.
Ztest
= 2 mA
80
80
80
90
130
150
170
180
200
215
240
255
MAX.
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
COEFFICIENT S
MIN.
(see Figs 4 and 5)
TEMPERATURE
at I
Ztest
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
TYP.
= 2 mA
Z
(mV/K)
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
MAX.
50
50
45
45
45
40
40
40
40
35
35
35
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
= 0 V
(pF)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
CURRENT I
NON-REPETITIVE
PEAK REVERSE
at t
T
amb
p
MAX.
= 100 μs;
= 25 °C
ZSM
(A)