BZX84C8V2LT1G ON Semiconductor, BZX84C8V2LT1G Datasheet - Page 3

• Manufacturer Part Number: BZX84C8V2LT1G
• Description: DIODE ZENER 8.2V 225MW SOT-23
• Manufacturer: ON Semiconductor
• Type: Voltage Regulatorr

Specifications of BZX84C8V2LT1G

• Voltage - Zener (nom) (vz): 8.2V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Power - Max: 225mW
• Impedance (max) (zzt): 15 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 8.2 V
• Voltage Tolerance: 6 %
• Voltage Temperature Coefficient: 4.7 mV / K
• Zener Current: 10 mA
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 0.7 uA
• Maximum Zener Impedance: 15 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Package Type: SOT-23
• Zener Voltage (typ): 8.2V
• Zener Test Current: 5mA
• Knee Impedance: 15Ohm
• Operating Temperature Classification: Military
• Rev Curr: 700nA
• Mounting: Surface Mount
• Pin Count: 3
• Operating Temp Range: -65C to 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BZX84C8V2LT1GOSTR

3. Zener voltage is measured with a pulse test current I
* The “G” suffix indicates Pb−Free package available.
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
BZX84C2V4LT1, G
BZX84C2V7LT1, G
BZX84C3V0LT1, G
BZX84C3V3LT1, G
BZX84C3V6LT1, G
BZX84C3V9LT1, G
BZX84C4V3LT1, G
BZX84C4V7LT1, G
BZX84C5V1LT1, G
BZX84C5V6LT1, G
BZX84C6V2LT1, G
BZX84C6V8LT1, G
BZX84C7V5LT1, G
BZX84C8V2LT1, G
BZX84C9V1LT1, G
BZX84C10LT1, G
BZX84C11LT1, G
BZX84C12LT1, G
BZX84C13LT1, G
BZX84C15LT1, G
BZX84C16LT1, G
BZX84C18LT1, G
BZX84C20LT1, G
BZX84C22LT1, G
BZX84C24LT1, G
BZX84C27LT1, G
BZX84C30LT1, G
BZX84C33LT1, G
BZX84C36LT1, G
BZX84C39LT1, G
BZX84C43LT1, G
BZX84C47LT1, G
BZX84C51LT1, G
BZX84C56LT1, G
BZX84C62LT1, G
BZX84C68LT1, G
BZX84C75LT1, G
Device*
Device
Marking
Marking
Device
Device
Y10
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
Z11
Z12
Z13
Z14
Z15
Z16
Y11
W9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
Min
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.4
4.8
5.2
5.8
6.4
7.7
8.5
9.4
28
31
34
37
40
44
48
52
58
64
70
4
7
@ I
@ I
V
V
Z1
ZT1
(Note 3)
Z1
ZT1
Nom
Nom
2.4
2.7
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
(Volts)
10
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
11
Below
3
= 5 mA
= 2 mA
Max
10.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
Max
28.9
11.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.4
6.6
7.2
7.9
8.7
9.6
32
35
38
41
46
50
54
60
66
72
79
5
6
@ I
@ I
Below
5 mA
2 mA
Z
Z
100
100
130
150
170
180
200
215
240
255
(W)
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
A
ZT1
ZT1
ZT1
ZT1
= 25°C unless otherwise noted, V
=
=
Z
at an ambient temperature of 25°C.
@ I
@ I
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
http://onsemi.com
Min
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
25
V
ZT2
(Note 3)
ZT2
Z2
V
Z2
Below
A
= 0.1 m-
= 1 mA
(V)
Max
10.6
12.7
15.5
21.1
23.2
25.5
Max
28.9
11.6
2.1
2.4
2.7
2.9
3.3
3.5
4.7
5.3
6.6
7.2
7.9
8.7
9.6
14
17
19
32
35
38
41
46
50
54
60
66
72
79
4
6
3
@ I
@ I
0.5 mA
Below
1 mA
Z
Z
600
600
600
600
600
600
600
500
480
400
150
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
(W)
80
80
80
ZT2
ZT2
ZT2
ZT4
=
=
@ I
@ I
10.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Min
11.4
Min
2.6
3.3
3.6
3.9
4.1
4.4
4.5
5.2
5.8
6.4
7.7
8.5
9.4
V
3
5
7
ZT3
ZT3
(Note 3)
Z3
V
Z3
Below
F
= 20 mA
= 10 mA
(V)
= 0.90 V Max. @ I
Max
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
73.2
80.2
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8.8
9.7
67
8
@ I
@ I
20 mA
10 mA
Below
Z
Z
100
120
130
140
(W)
110
50
50
50
40
40
30
30
15
15
10
10
10
10
15
20
20
20
20
25
25
45
50
55
60
70
80
90
ZT3
ZT3
ZT3
ZT3
6
6
6
6
8
=
=
mA
mA
Max Reverse
Max Reverse
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
I
I
0.7
0.5
0.2
0.1
0.1
0.1
R
R
50
20
10
F
5
5
3
3
3
2
1
3
2
1
Leakage
Leakage
Current
Current
= 10 mA)
@
@
Volts
10.5
11.2
12.6
15.4
16.8
18.9
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
V
14
V
(V)
21
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
R
R
@ I
@ I
(mV/k) Below
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Min
Min
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
ZT1
ZT1
(mV/k)
q
q
VZ
VZ
= 5 mA
= 2 mA
Max
−2.5
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
0
0
0
0
0
0
@ V
f = 1 MHz
@ V
f = 1 MHz
C (pF)
C (pF)
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
70
70
70
70
45
40
40
40
40
35
35
35
R
R
= 0
= 0