BZT52H-C11,115 NXP Semiconductors, BZT52H-C11,115 Datasheet - Page 4
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BZT52H-C11,115
Manufacturer Part Number
BZT52H-C11,115
Description
DIODE ZENER 11V 375MW SOD123F
Manufacturer
NXP Semiconductors
Datasheet
1.BZT52H-C10115.pdf
(13 pages)
Specifications of BZT52H-C11,115
Package / Case
SOD-123 Flat Leads
Voltage - Zener (nom) (vz)
11V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
100nA @ 8V
Tolerance
±5%
Power - Max
375mW
Impedance (max) (zzt)
10 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
11 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
7.2 mV / K
Power Dissipation
830 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3753-2
934059402115
BZT52H-C11 T/R
934059402115
BZT52H-C11 T/R
NXP Semiconductors
7. Characteristics
Table 8.
T
BZT52H_SER
Product data sheet
BZT52H
-xxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
j
= 25
°
C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Working
voltage
V
I
Min
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
Z
Z
= 5 mA
(V);
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
Table 7.
T
[1]
Symbol
V
j
F
= 25
Pulse test: t
Maximum differential
resistance r
I
400
500
500
500
500
500
500
500
480
400
150
80
80
80
°
Z
C unless otherwise specified.
= 1 mA
Parameter
forward voltage
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
dif
I
85
83
95
95
95
95
95
78
60
40
10
8
10
10
Z
= 5 mA
(Ω)
Rev. 3 — 7 December 2010
Reverse
current I
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
Conditions
I
F
= 10 mA
1
1
1
1
1
1
1
2
2
4
V
2
4
5
5
R
R
(μA)
(V)
Single Zener diodes in a SOD123F package
Temperature
coefficient
S
I
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
Z
Z
= 5 mA
(mV/K);
Max
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
[1]
BZT52H series
Min
-
Diode
capacitance
C
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
d
(pF)
Typ
-
[1]
© NXP B.V. 2010. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
6.0
6.0
4.0
4.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
ZSM
Max
0.9
(A)
[2]
Unit
V
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