BZX84C10LT1G ON Semiconductor, BZX84C10LT1G Datasheet - Page 4

DIODE ZENER 10V 225MW SOT-23

BZX84C10LT1G

Manufacturer Part Number
BZX84C10LT1G
Description
DIODE ZENER 10V 225MW SOT-23
Manufacturer
ON Semiconductor
Type
Voltage Regulatorr
Datasheets

Specifications of BZX84C10LT1G

Voltage - Zener (nom) (vz)
10V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
200nA @ 7V
Power - Max
225mW
Impedance (max) (zzt)
20 Ohm
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Operating Temperature
-65°C ~ 150°C
Zener Voltage
10 V
Voltage Tolerance
6 %
Voltage Temperature Coefficient
6.25 mV / K
Zener Current
10 mA
Power Dissipation
300 mW
Maximum Reverse Leakage Current
0.2 uA
Maximum Zener Impedance
20 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Capacitance, Junction
130 pF
Current, Forward
10 mA
Current, Reverse
5 mA
Package Type
SOT-23 (TO-236)
Primary Type
Zener
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
0.9 V
Voltage, Reverse
10 V
Configuration
Single
Zener Voltage (typ)
10V
Zener Test Current
5mA
Knee Impedance
20Ohm
Operating Temperature Classification
Military
Rev Curr
200nA
Mounting
Surface Mount
Pin Count
3
Operating Temp Range
-65C to 150C
Dc
10+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BZX84C10LT1GOSTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZX84C10LT1G
Manufacturer:
ON Semiconductor
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Manufacturer:
ON
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90 000
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BZX84C10LT1G
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ON
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30 000
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BZX84C10LT1G
Manufacturer:
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Part Number:
BZX84C10LT1G
Quantity:
225 000
4. Zener voltage is measured with a pulse test current I
* The “G” suffix indicates Pb-Free package available.
ELECTRICAL CHARACTERISTICS - BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1‐Anode, 2‐No Connection, 3‐Cathode) (T
BZX84B4V7LT1, G
BZX84B5V1LT1, G
BZX84B5V6LT1, G
BZX84B6V2LT1, G
BZX84B6V8LT1, G
BZX84B7V5LT1, G
BZX84B8V2LT1, G
BZX84B9V1LT1, G
BZX84B12LT1, G
BZX84B15LT1, G
BZX84B16LT1, G
BZX84B18LT1, G
BZX84B22LT1, G
BZX84B24LT1, G
Device
Marking
Device
T10
T11
T12
T13
T14
T15
T16
T17
T18
T22
T19
T20
T24
T25
BZX84B4V7LT1, BZX84C2V4LT1 Series
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
14.7
15.7
17.6
21.6
23.5
V
11.8
Min
Z
(Volts) @ I
(Note 4)
A
Nom
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
12
15
16
18
22
24
= 25°C unless otherwise noted, V
ZT
Z
= 5 mA
at an ambient temperature of 25°C.
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
12.2
15.3
16.3
18.4
22.4
24.5
I
Z
ZT
(Note 4)
ZT
4
Max
= 5 mA
80
60
40
10
15
15
15
15
25
30
40
45
55
70
(W) @
mA
I
R
0.05
0.05
0.05
0.05
0.05
0.7
0.5
0.1
3
2
1
3
2
1
Max Reverse
F
Leakage
Current
= 0.90 V Max. @ I
@
Volts
10.5
11.2
12.6
15.4
16.8
V
2
2
2
4
4
5
5
6
8
R
-3.5
-2.7
10.4
12.4
16.4
18.4
Min
0.4
1.2
2.5
3.2
3.8
9.2
-2
F
6
@ I
= 10 mA)
(mV/k)
ZT
q
VZ
= 5 mA
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
10
13
14
16
20
22
7
f = 1 MHz
@ V
C (pF)
260
225
200
185
155
140
135
130
130
105
100
110
85
80
R
=0,

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