BAY135-TAP Vishay, BAY135-TAP Datasheet - Page 2

• Manufacturer Part Number: BAY135-TAP
• Description: Diodes (General Purpose, Power, Switching) 140 Volt 200mA 2.0 Amp IFSM
• Manufacturer: Vishay

Specifications of BAY135-TAP

• Product: General Purpose Diodes
• Peak Reverse Voltage: 140 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 2 A
• Configuration: Single
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.003 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: DO-35-2
• Diode Type: Small Signal
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 140V
• Forward Voltage Vf Max: 1V
• Forward Surge Current Ifsm Max: 2A
• Diode Case Style: DO-35
• No. Of Pins: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAY135
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
Package Dimensions
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
amb
amb
94 9079
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
10000
Document no.: 6.560-5004.02-4
94 9366
Rev. 6 - Date: 29. January 2007
1000
100
Parameter
10
1
0
V
R
Scattering Limit
T
= V
j
4 0
- Junction Temperature (°C)
RRM
[e-mail], [e-mail],
8 0
26 (1.024) min.
For technical questions within your region, please contact one of the following:
I
in millimeters (inches):
R
E ≤ 300 lx, V
= 5 µA, t
120
E ≤ 300 lx, V
V
E ≤ 300 lx, V
R
Test condition
I
F
p
= 0, f = 1 MHz
160
/T = 0.01, t
= 100 mA
R
, T
200
R
j
= 60 V
= 125 °C
3.9 (0.154) max.
R
p
= 0.3 ms
Cathode identification
DO-35
Symbol
V
C
V
I
I
I
(BR)
R
R
R
F
D
94 9078
1000
Figure 2. Forward Current vs. Forward Voltage
100
0.1
10
1
0
[e-mail]
T
Min.
140
26 (1.024) min.
j
= 2 5 °C
0.4
V
F
- Forward Voltage (V)
0.8
Typ.
Scattering Limit
1.2
Document Number 85552
Max.
1000
0.5
1.6
3
1
5
Rev. 1.8, 17-Aug-10
2.0
Unit
mV
nA
µA
nA
pF
V