BAS19-GS08 Vishay, BAS19-GS08 Datasheet - Page 2
![Diodes (General Purpose, Power, Switching) 120 Volt Fast Switch](/photos/16/4/160431/sot23_sml.jpg)
BAS19-GS08
Manufacturer Part Number
BAS19-GS08
Description
Diodes (General Purpose, Power, Switching) 120 Volt Fast Switch
Manufacturer
Vishay
Datasheet
1.BAS19-GS08.pdf
(5 pages)
Specifications of BAS19-GS08
Product
Switching Diodes
Peak Reverse Voltage
120 V
Forward Continuous Current
0.2 A
Max Surge Current
2.5 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
0.25 W
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Diode Type
Small Signal
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
120V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
50ns
Forward Surge Current Ifsm Max
2.5A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BAS19-V, BAS20-V, BAS21-V
Vishay Semiconductors
Absolute Maximum Ratings
T
1)
2)
Thermal Characteristics
T
1)
Electrical Characteristics
T
www.vishay.com
2
amb
amb
amb
Continuous reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward
current
Non-repetitive peak forward
surge current
Maximum average forward
rectified current
DC forward current
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage
Leakage current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
Measured under pulse conditions; Pulse time = T
Device on fiberglass substrate, see layout on next page
Device on fiberglass substrate, see layout on next page
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
I
F
V
= I
(av. over any 20 ms period)
R
R
= V
V
= 30 mA, R
R
Test condition
I
I
V
F
F
Rmax.
I
= 0, f = 1 MHz
F
I
R
Test condition
rr
= 100 mA
= 200 mA
= 10 mA
= V
= 3 mA
t = 1 µs
Test condition
t = 1 s
, T
p
Rmax.
≤ 0.3 ms
j
= 150 °C
L
= 100 Ω,
Symbol
C
V
V
I
I
t
BAS19-V
BAS20-V
BAS21-V
BAS19-V
BAS20-V
BAS21-V
r
R
R
rr
tot
F
F
f
Symbol
Part
R
T
thJA
T
stg
j
DiodesEurope@vishay.com
Min.
Symbol
V
V
V
I
I
I
I
F(AV)
P
FSM
FSM
FRM
V
V
V
RRM
RRM
RRM
I
F
tot
R
R
R
- 65 to + 150
430
Value
Typ.
150
5
1)
200
200
250
Value
100
150
200
120
200
250
625
2.5
0.5
Document Number 85540
1)
2)
2)
Max.
1.25
100
100
1.0
50
5
Rev. 1.7, 10-Nov-10
Unit
°C
°C
°C
Unit
mW
mA
mA
mA
V
V
V
V
V
V
A
A
Unit
nA
μA
pF
ns
Ω
V
V