GA200SA60UP Vishay, GA200SA60UP Datasheet - Page 2

• Manufacturer Part Number: GA200SA60UP
• Description: IGBT Transistors N-Ch 600 Volt 100A
• Manufacturer: Vishay

Specifications of GA200SA60UP

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-227-4
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

GA200SA60UP
Vishay Semiconductors
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Emitter to collector breakdown voltage
Temperature coeff. of breakdown
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate-emitter charge (turn-on)
Gate-collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
V
Insulated Gate Bipolar Transistor
V
SYMBOL
SYMBOL
V
V
(BR)CES
(Ultrafast Speed IGBT), 100 A
V
V
GE(th)
(BR)CES
(BR)ECS
t
t
t
t
C
I
I
C
C
J
CE(on)
Q
Q
E
GE(th)
d(on)
d(off)
E
d(on)
d(off)
Q
E
E
g
CES
GES
L
t
t
t
t
oes
res
J
on
off
ies
ge
gc
ts
ts
= 25 °C unless otherwise specified)
fe
r
f
r
f
E
g
/T
= 25 °C unless otherwise specified)
/T
J
J
I
V
V
T
I
V
V
R
Energy losses include “tail”
See fig. 9, 10, 14
T
I
V
Energy losses include “tail”
See fig. 10, 11, 14
Measured 5 mm from package
V
V
f = 1.0 MHz; See fig. 7
V
V
Pulse width  80 μs; duty factor  0.1
V
I
I
I
V
V
V
Pulse width 5.0 μs, single shot
V
V
V
C
C
C
C
C
C
CC
GE
J
CC
GE
J
GE
GE
CC
GE
GE
GE
CE
CE
CE
GE
GE
GE
g
= 100 A
= 100 A
= 100 A, V
= 100 A
= 200 A
= 100 A, T
= 25 °C
= 150 °C
= 2.0 
= 0 V, I
= 0 V, I
= 0 V, I
= V
= V
= 100 V, I
= 0 V, V
= 0 V, V
= ± 20 V
= 400 V
= 15 V; See fig. 8
= 480 V
= 15 V
= 15 V, R
= 0 V
= 30 V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
, I
, I
C
C
C
C
C
CE
CE
J
CC
= 250 μA
= 1.0 A
= 10 mA
g
= 250 μA
= 2.0 mA
C
= 150 °C
= 600 V
= 600 V, T
= 2.0 
= 100 A
= 480 V
[e-mail]
J
= 150 °C
V
See fig. 2, 5
GE
= 15 V
MIN.
MIN.
600
3.0
18
79
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16 500
TYP.
TYP.
1000
0.38
1.60
1.92
1.54
0.98
3.48
4.46
7.24
- 11
770
100
260
130
300
160
460
200
5.0
54
79
56
75
Document Number: 94364
-
-
-
-
-
-
-
Revision: 22-Jul-10
± 250
MAX.
MAX.
1200
150
380
200
450
1.9
6.0
1.0
7.6
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mV/°C
UNITS
V/°C
mA
mJ
mJ
nA
nC
nH
pF
ns
ns
V
V
S