BAR64V-05-GS08 Vishay, BAR64V-05-GS08 Datasheet
BAR64V-05-GS08
Specifications of BAR64V-05-GS08
Related parts for BAR64V-05-GS08
BAR64V-05-GS08 Summary of contents
Page 1
... High breakdown voltage Applications For frequency GHz RF-signal tuning Signal attenuator and switches Mobile , wireless and TV-Applications Parts Table Part BAR64V-05 BAR64V-05-GS18 or BAR64V-05-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Forward current Junction temperature Storage temperature range ...
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... BAR64V-05 Vishay Semiconductors Parameter Diode capacitance MHz MHz MHz, V Forward resistance f = 100 MHz 100 MHz 100 MHz, I Charge carrier life time mA Typical Characteristics (T 100 100 MHz 10.0 1.0 0.1 0.1 1 Forward Current ( mA ) 18342 F Fig. 1 Forward Resistance vs. Forward Current 0. MHz 0.45 0.40 ...
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... Document Number 85695 Rev. 1.2, 26-Apr-04 3500 Mounting Pad Layout 2.0 (0.079) 0.95 (0.037) 2.6 (.102) 2.4 (.094) BAR64V-05 Vishay Semiconductors 0.8 (0.031) 0.9 (0.035) 0.95 (0.037) ISO Method A 17418 www.vishay.com 3 ...
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... BAR64V-05 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...