BZX79-C3V9,113 NXP Semiconductors, BZX79-C3V9,113 Datasheet - Page 7
![DIODE ZENER 3.9V 500MW DO-35](/photos/5/24/52490/568-do-35_sod27_sml.jpg)
BZX79-C3V9,113
Manufacturer Part Number
BZX79-C3V9,113
Description
DIODE ZENER 3.9V 500MW DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BZX79-C5V1113.pdf
(10 pages)
Specifications of BZX79-C3V9,113
Voltage - Zener (nom) (vz)
3.9V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
3µA @ 1V
Tolerance
±5%
Power - Max
500mW
Impedance (max) (zzt)
90 Ohm
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Operating Temperature
-65°C ~ 200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933117690113
BZX79-C3V9 T/R
BZX79-C3V9 T/R
BZX79-C3V9 T/R
BZX79-C3V9 T/R
NXP Semiconductors
2002 Feb 27
handbook, halfpage
handbook, halfpage
Voltage regulator diodes
(mV/K)
(1) T
(2) T
Fig.3
BZX79-B/C2V4 to BZX79-B/C4V3.
T
Fig.5
P ZSM
j
S Z
(W)
= 25 to 150 °C.
10
10
10
−1
−2
−3
j
j
0
1
10
3
2
= 25 °C (prior to surge).
= 150 °C (prior to surge).
0
−1
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Temperature coefficient as a function of
working current; typical values.
20
1
(1)
(2)
4V3
duration (ms)
40
3V9
2V4
2V7
3V3
I Z (mA)
3V6
MBG801
MBG783
3V0
10
60
7
handbook, halfpage
handbook, halfpage
(mV/K)
T
Fig.4
BZX79-B/C4V7 to BZX79-B/C12.
T
Fig.6
j
j
S Z
(mA)
= 25 °C.
= 25 to 150 °C.
I F
300
200
100
10
−5
0
5
0
0.6
0
Typical forward current as a function of
forward voltage.
Temperature coefficient as a function of
working current; typical values.
4
8
9V1
8V2
7V5
6V8
0.8
12
11
10
12
BZX79 series
6V2
5V6
5V1
4V7
V F (V)
Product data sheet
16
I Z (mA)
MBG781
MBG782
20
1