BZV55-C18,135 NXP Semiconductors, BZV55-C18,135 Datasheet - Page 6

• Manufacturer Part Number: BZV55-C18,135
• Description: DIODE ZENER 18V 500MW SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BZV55-C18,135

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Zener (nom) (vz): 18V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 12.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (max) (zzt): 45 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 17.95 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 14.4 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 45 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933699580135; BZV55-C18 /T3; BZV55-C18 /T3

NXP Semiconductors
Table 9.
T
[1]
[2]
BZV55_SER
Product data sheet
BZV55-
xxx
27
30
33
36
39
43
47
51
56
62
68
75
j
= 25
f = 1 MHz; V
t
p
= 100 s; square wave; T

C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZV55-B27 to BZV55-C75
R
= 0 V
Working
voltage
V
I
Min
26.5
25.1
29.4
28.0
32.3
31.0
35.3
34.0
38.2
37.0
42.1
40.0
46.1
44.0
50.0
48.0
54.9
52.0
60.8
58.0
66.6
64.0
73.5
70.0
Z
Z
= 2 mA
(V)
Max
27.5
28.9
30.6
32.0
33.7
35.0
36.7
38.0
39.8
41.0
43.9
46.0
47.9
50.0
52.0
54.0
57.1
60.0
63.2
66.0
69.4
72.0
76.5
79.0
j
= 25 C prior to surge
65
70
75
80
100
120
150
170
Differential resistance
r
I
Typ
80
85
85
90
Z
dif
= 0.5 mA
()
All information provided in this document is subject to legal disclaimers.
300
300
325
350
Max
350
375
375
400
425
450
475
500
Rev. 5 — 26 January 2011
I
Typ
25
30
35
35
40
45
50
60
70
80
90
95
Z
= 2 mA
Max
80
80
80
90
130
150
170
180
200
215
240
255
Temperature
coefficient
S
I
Min
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
Z
Z
= 2 mA
(mV/K)
Typ
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
Diode
capacitance
C
Max
50
50
45
45
45
40
40
40
40
35
35
35
d
BZV55 series
(pF)
Voltage regulator diodes
[1]
© NXP B.V. 2011. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
ZSM
(A)
[2]
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