BZX84-B3V0,215 NXP Semiconductors, BZX84-B3V0,215 Datasheet - Page 6
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BZX84-B3V0,215
Manufacturer Part Number
BZX84-B3V0,215
Description
DIODE ZENER 3V 250MW SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BZX84-B3V0215.pdf
(11 pages)
Specifications of BZX84-B3V0,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Tolerance
±2%
Current - Reverse Leakage @ Vr
10µA @ 1V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Voltage - Zener (nom) (vz)
3V
Impedance (max) (zzt)
95 Ohm
Zener Voltage
3 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
- 2.1 mV / K
Zener Current
200 mA
Power Dissipation
250 mW
Maximum Reverse Leakage Current
10 uA
Maximum Zener Impedance
95 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933770300215::BZX84-B3V0 T/R::BZX84-B3V0 T/R
Table 2 Per type BZX84-A/B/C27 to A/B/C75
T
27
30
33
36
39
43
47
51
56
62
68
75
BZX84-
j
= 25 °C unless otherwise specified.
Axxx
Bxxx
Cxxx
26.73
29.70
32.67
35.64
38.61
42.57
46.53
50.49
55.44
61.38
67.32
74.25
MIN.
Tol. ±1% (A)
27.27
30.30
33.33
36.36
39.39
43.43
47.47
51.51
56.56
62.62
68.68
75.75
MAX.
WORKING VOLTAGE
at I
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
Tol. ±2% (B)
MIN.
Ztest
V
Z
(V)
= 2 mA
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
MAX.
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Tol. approx.
MIN.
±5% (C)
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
MAX.
I
65
70
75
80
80
85
85
90
100
120
150
170
Ztest
TYP.
= 0.5 mA
DIFFERENTIAL
at
RESISTANCE
300
300
325
350
350
375
375
400
425
450
475
500
MAX.
r
dif
(Ω)
25
30
35
35
40
45
50
60
70
80
90
95
I
TYP. MAX.
Ztest
= 2 mA
at
80
80
80
90
130
150
170
180
200
215
240
255
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
MIN.
(see Figs 4 and 5)
TEMP. COEFF.
at I
S
Ztest
Z
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
TYP. MAX.
(mV/K)
= 2 mA
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
= 0 V
(pF)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
NON-REPETITIVE
PEAK REVERSE
at t
T
CURRENT
amb
I
p
ZSM
MAX.
= 100 μs;
= 25 °C
(A)