MTZJT-7739B Rohm Semiconductor, MTZJT-7739B Datasheet - Page 4

• Manufacturer Part Number: MTZJT-7739B
• Description: DIODE ZENER 39V 500MW DO-34
• Manufacturer: Rohm Semiconductor

Specifications of MTZJT-7739B

• Voltage - Zener (nom) (vz): 39V
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Power - Max: 500mW
• Impedance (max) (zzt): 85 Ohm
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Operating Temperature: -65°C ~ 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -

Diodes
0.001
1000
0.01
36.7
36.6
36.5
36.4
36.3
36.2
100
0.1
10
10
1
33 34 35 36 37 38 39 40 41 42 43
0.1
Ta=-25℃
Zz-Iz CHARACTERISTICS
Vz-Iz CHARACTERISTICS
ZENER CURRENT(mA)
ZENER VOLTAGE:Vz(V)
Ta=25℃
Vz DISRESION MAP
AVE:36.47V
Ta=75℃
1
Ta=125℃
Ta=175℃
Ta=25℃
n=30pcs
IZ=5mA
10
0.0001
10000
0.001
1000
0.01
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
1
0
0
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
IR DISRESION MAP
10
AVE:0.091nA
15
Ta=175℃
Ta=125℃
20
Ta=25℃
Ta=75℃
Ta=-25℃
Ta=25℃
VR=27V
n=30pcs
25
30
100
100
10
90
80
70
60
50
40
30
20
10
1
0
0
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
10
Ct DISRESION MAP
AVE:19.6pF
Rev.D
MTZJ39B
20
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
30
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