MTZJT-775.6B Rohm Semiconductor, MTZJT-775.6B Datasheet - Page 3

• Manufacturer Part Number: MTZJT-775.6B
• Description: DIODE ZENER 5.6V 500MW DO-34
• Manufacturer: Rohm Semiconductor

Specifications of MTZJT-775.6B

• Package / Case: DO-204AG, DO-34, Axial
• Voltage - Zener (nom) (vz): 5.6V
• Current - Reverse Leakage @ Vr: 5µA @ 2.5V
• Power - Max: 500mW
• Impedance (max) (zzt): 40 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 175°C
• Zener Voltage Vz Typ: 5.6V
• Power Dissipation Max: 500mW
• Operating Temperature Range: -65°C To +175°C
• Diode Case Style: DO-34
• No. Of Pins: 2
• Svhc: No SVHC (18-Jun-2010)
• Termination: RoHS Compliant
• Zener Voltage: 5.59 V
• Voltage Tolerance: 3 %
• Zener Current: 20 mA
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 5 uA
• Maximum Zener Impedance: 40 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
0.001
0.01
0.1
10
1
3.9
3.6
0
4.3
4.7
-0.02
-0.04
-0.06
-0.08
600
500
400
300
200
100
0.08
0.06
0.04
0.02
0.1
5.1
0
0
0
0
5
5.6
6.2
25
AMBIENT TEMPERATURE:Ta(℃)
γz-Vz CHARACTERISTICS
6.8
ZENER VOLTAGE：Vz(V)
7.5
10
Pd-Ta CHARACTERISTICS
8.2
50
9.1
10
75
20
10
11
100
12
30
13
125
15
15
150
16
40
Vz-Iz CHARACTERISTICS
ZENER VOLTAGE:Vz(V)
30
25
20
15
10
5
0
-5
18
20
20
10000
22
1000
1000
100
100
0.1
10
10
1
1
0.001
0.001
24
25
PRSM-TIME CHARACTERISTICS
0.01
IM=10mA
0.01
Mounted on epoxy board
27
Rth-t CHARACTERISTICS
1ms
300us
0.1
0.1
time
TIME:t(ms)
TIME:t(s)
30
30
IF=100mA
1
PRSM
1
33
10
t
10
Rth(j-c)
Rth(j-a)
100
36
35
100
Rev.D
1000
MTZJ5.6B
39
40
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