BZV85-C56,133 NXP Semiconductors, BZV85-C56,133 Datasheet - Page 5
![DIODE VREG 56V 1.3W DO-41](/photos/5/24/52494/do-41_axial_sml.jpg)
BZV85-C56,133
Manufacturer Part Number
BZV85-C56,133
Description
DIODE VREG 56V 1.3W DO-41
Manufacturer
NXP Semiconductors
Datasheet
1.BZV85-C12113.pdf
(9 pages)
Specifications of BZV85-C56,133
Package / Case
DO-204AL, DO-41, Axial
Voltage - Zener (nom) (vz)
56V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
50nA @ 39V
Tolerance
±5%
Power - Max
1.3W
Impedance (max) (zzt)
150 Ohm
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C
Zener Voltage
56 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
54.9 mV / K
Power Dissipation
1.3 W
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
150 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933500830133
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board with 1 cm
GRAPHICAL DATA
1999 May 11
handbook, full pagewidth
R
R
SYMBOL
Voltage regulator diodes
th j-tp
th j-a
R th j-tp
(K/W)
10
10
10
1
3
2
10
−2
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
10
−1
δ = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
PARAMETER
1
2
copper area per lead.
5
10
lead length 4 mm; see Fig.2
lead length10 mm; note 1
CONDITIONS
10
2
t p
10
3
T
BZV85 series
VALUE
t p (ms)
110
175
Product data sheet
δ
=
t p
T
MBG929
10
4
UNIT
K/W
K/W