BZV85-C13,113 NXP Semiconductors, BZV85-C13,113 Datasheet - Page 4

• Manufacturer Part Number: BZV85-C13,113
• Description: DIODE ZENER 13V 1.3W DO-41
• Manufacturer: NXP Semiconductors

Specifications of BZV85-C13,113

• Package / Case: DO-204AL, DO-41, Axial
• Voltage - Zener (nom) (vz): 13V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Current - Reverse Leakage @ Vr: 200nA @ 9.1V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (max) (zzt): 10 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 13.25 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 9.7 mV / K
• Power Dissipation: 1.3 W
• Maximum Reverse Leakage Current: 0.2 uA
• Maximum Zener Impedance: 10 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933500680113; BZV85-C13 T/R; BZV85-C13 T/R

33
36
39
43
47
51
56
62
68
75
BZV85-
CXXX
MIN.
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
WORKING
VOLTAGE
at I
V
Z
Ztest
(V)
MAX.
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
DIFFERENTIAL
RESISTANCE
100
125
150
175
200
225
45
50
60
75
at I
r
MAX.
dif
Ztest
(Ω)
see Figs 5 and 6
TEMP. COEFF.
MIN.
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
S
Z
at I
(mV/K)
Ztest
MAX.
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
CURRENT
I
Ztest
TEST
(mA)
8
8
6
6
4
4
4
4
4
4
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
45
45
45
40
40
40
40
35
35
35
= 0 V
(pF)
CURRENT at
I
R
MAX.
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
REVERSE
REVERSE
VOLTAGE
(μA)
23
25
27
30
33
36
39
43
48
53
V
(V)
R
at t
T
PEAK REVERSE CURRENT
amb
MAX. (A)
p
= 100 μs;
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
= 25 °C
NON-REPETITIVE
I
ZSM
at t
T
MAX. (mA)
amb
350
320
296
270
246
226
208
186
171
161
p
= 10 ms;
= 25 °C