BZV85-C36,113 NXP Semiconductors, BZV85-C36,113 Datasheet - Page 4
![DIODE ZENER 36V 1.3W DO-41](/photos/5/24/52493/568-do-41_sod66_sml.jpg)
BZV85-C36,113
Manufacturer Part Number
BZV85-C36,113
Description
DIODE ZENER 36V 1.3W DO-41
Manufacturer
NXP Semiconductors
Datasheet
1.BZV85-C36113.pdf
(9 pages)
Specifications of BZV85-C36,113
Package / Case
DO-204AL, DO-41, Axial
Mounting Type
Through Hole, Axial
Power - Max
1.3W
Tolerance
±5%
Current - Reverse Leakage @ Vr
50nA @ 25V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Voltage - Zener (nom) (vz)
36V
Impedance (max) (zzt)
50 Ohm
Zener Voltage
36 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
33.55 mV / K
Zener Current
500 mA
Power Dissipation
1.3 W
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
50 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933500780113::BZV85-C36 T/R::BZV85-C36 T/R
33
36
39
43
47
51
56
62
68
75
BZV85-
CXXX
MIN.
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
WORKING
VOLTAGE
at I
V
Z
Ztest
(V)
MAX.
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
DIFFERENTIAL
RESISTANCE
100
125
150
175
200
225
45
50
60
75
at I
r
MAX.
dif
Ztest
(Ω)
see Figs 5 and 6
TEMP. COEFF.
MIN.
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
S
Z
at I
(mV/K)
Ztest
MAX.
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
CURRENT
I
Ztest
TEST
(mA)
8
8
6
6
4
4
4
4
4
4
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
45
45
45
40
40
40
40
35
35
35
= 0 V
(pF)
CURRENT at
I
R
MAX.
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
REVERSE
REVERSE
VOLTAGE
(μA)
23
25
27
30
33
36
39
43
48
53
V
(V)
R
at t
T
PEAK REVERSE CURRENT
amb
MAX. (A)
p
= 100 μs;
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
= 25 °C
NON-REPETITIVE
I
ZSM
at t
T
MAX. (mA)
amb
350
320
296
270
246
226
208
186
171
161
p
= 10 ms;
= 25 °C