BZX585-C4V3,115 NXP Semiconductors, BZX585-C4V3,115 Datasheet - Page 5

• Manufacturer Part Number: BZX585-C4V3,115
• Description: DIODE ZENER 4.3V 300MW SOD523
• Manufacturer: NXP Semiconductors

Specifications of BZX585-C4V3,115

• Package / Case: SC-79, SOD-523
• Voltage - Zener (nom) (vz): 4.3V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (max) (zzt): 90 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 4.305 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 1.7 mV / K
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 3 uA
• Maximum Zener Impedance: 90 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055842115; BZX585-C4V3 T/R; BZX585-C4V3 T/R

Table 1 Per type BZX585-B/C2V4 to B/C24
T
BZX585-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
amb
B or C
XXX
= 25 °C unless otherwise specified.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78 11.22
11.76 12.24 11.40
12.74 13.26 12.35
14.70 15.30 14.25
15.68 16.32 15.20
17.64 18.36 17.10
19.60 20.40 19.00
21.56 22.44 20.90
23.52 24.48 22.80
Tol. ± 2% (B)
MIN.
WORKING VOLTAGE
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20 9.50
at I
MAX.
Ztest
V
Z
(V)
= 5 mA
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
10.45
Tol. ± 5% (C)
MIN.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
MAX.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
50
50
60
60
60
at I
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 1 mA
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
MAX.
r
dif
(Ω)
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
10
10
15
20
25
at I
TYP.
Ztest
= 5 mA
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
MAX.
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
2.2
3.0
3.6
4.3
5.2
6.0
6.9
7.9
8.8
10.7
12.4
14.4
16.4
18.4
20.4
(see figs 3 AND 4)
TEMP. COEFF.
at I
S
Ztest
Z
TYP.
(mV/K)
= 5 mA
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
80
70
60
55
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
= 0 V
(pF)
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
MAX.
p
= 100 μs