BZX84J-C43,115 NXP Semiconductors, BZX84J-C43,115 Datasheet - Page 7
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BZX84J-C43,115
Manufacturer Part Number
BZX84J-C43,115
Description
DIODE ZENER 43V 550MW SC-90
Manufacturer
NXP Semiconductors
Datasheet
1.BZX84J-C18115.pdf
(12 pages)
Specifications of BZX84J-C43,115
Package / Case
SC-90, SOD-323F
Voltage - Zener (nom) (vz)
43V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
50nA @ 30.1V
Tolerance
±5%
Power - Max
550mW
Impedance (max) (zzt)
80 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
43 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
42.1 mV / K
Power Dissipation
550 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
80 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061005115
BZX84J-C43 T/R
BZX84J-C43 T/R
BZX84J-C43 T/R
BZX84J-C43 T/R
NXP Semiconductors
BZX84J_SER_1
Product data sheet
Fig 1. Non-repetitive peak reverse power dissipation
Fig 3. Temperature coefficient as a function of
(mV/K)
P
(1) T
(2) T
(W)
S
ZSM
Z
10
10
0.5
0.5
1.5
10
0
1
2
1
10
10
3
2
as a function of pulse duration; maximum
values
BZX84J-B/C2V4 to BZX84J-B/C4V7
T
working current; typical values
j
j
j
= 25 C (prior to surge)
= 150 C (prior to surge)
= 25 C to 150 C
1
1
2V4
1
2V7
1
(1)
(2)
10
t
p
(ms)
I
Z
4V7
(mA)
4V3
3V9
3V6
mbg801
mld444
3V3
3V0
10
10
Rev. 01 — 1 March 2007
2
Fig 2. Forward current as a function of forward
Fig 4. Temperature coefficient as a function of
(mV/K)
(mA)
S
I
F
300
200
100
Z
12
0
8
4
0
4
10
T
voltage; typical values
BZX84J-B/C5V1 to BZX84J-B/C15
T
working current; typical values
0.6
j
j
= 25 C
= 25 C to 150 C
1
1
BZX84J series
0.8
10
Single Zener diodes
15
13
12
11
10
9V1
© NXP B.V. 2007. All rights reserved.
I
Z
8V2
7V5
6V8
6V2
(mA)
V
5V6
5V1
mbg781
F
mld445
(V)
10
1
2
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