BZV55-B16,115 NXP Semiconductors, BZV55-B16,115 Datasheet - Page 4

• Manufacturer Part Number: BZV55-B16,115
• Description: DIODE ZENER 13V 500MW SOD80C
• Manufacturer: NXP Semiconductors
• Type: Voltage Regulatorr

Specifications of BZV55-B16,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Mounting Type: Surface Mount
• Power - Max: 500mW
• Tolerance: ±2%
• Current - Reverse Leakage @ Vr: 50nA @ 11.2V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Voltage - Zener (nom) (vz): 13V
• Impedance (max) (zzt): 40 Ohm
• Zener Voltage: 16 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 12.4 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 40 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Package Type: Mini MELF
• Zener Voltage (typ): 16V
• Zener Test Current: 5mA
• Knee Impedance: 40Ohm
• Operating Temperature Classification: Military
• Rev Curr: 50nA
• Mounting: Surface Mount
• Pin Count: 2
• Operating Temp Range: -65C to 200C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933827800115::BZV55-B16 T/R::BZV55-B16 T/R

NXP Semiconductors
Table 8.
T
BZV55_SER
Product data sheet
BZV55-
xxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
j
= 25

C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZV55-B2V4 to BZV55-C24
Working
voltage
V
I
Min
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
Z
Z
= 5 mA
(V)
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
275
300
325
350
375
400
410
425
400
80
50
50
Differential resistance
r
I
Typ
40
30
30
40
40
50
Z
dif
= 1 mA
()
All information provided in this document is subject to legal disclaimers.
600
600
600
600
600
600
600
500
480
400
150
150
Max
150
80
80
80
100
150
Rev. 5 — 26 January 2011
70
75
80
85
85
85
80
50
40
15
I
Typ
6
6
6
6
6
8
10
10
Z
= 5 mA
100
100
95
95
90
90
90
80
60
40
Max
10
15
15
15
15
20
20
25
Temperature
coefficient
S
I
Min
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
Z
Z
= 5 mA
(mV/K)
Typ
1.6
2.0
2.1
2.4
2.4
2.5
2.5
1.4
0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
Diode
capacitance
C
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
d
BZV55 series
(pF)
Voltage regulator diodes
[1]
© NXP B.V. 2011. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
ZSM
(A)
[2]
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