BZV55-B20,115 NXP Semiconductors, BZV55-B20,115 Datasheet - Page 2

DIODE ZENER 20V 500MW SOD80C

BZV55-B20,115

Manufacturer Part Number
BZV55-B20,115
Description
DIODE ZENER 20V 500MW SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BZV55-B20,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Mounting Type
Surface Mount
Power - Max
500mW
Tolerance
±2%
Current - Reverse Leakage @ Vr
50nA @ 14V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Voltage - Zener (nom) (vz)
20V
Impedance (max) (zzt)
55 Ohm
Zener Voltage
20 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
15.6 mV / K
Zener Current
250 mA
Power Dissipation
500 mW
Maximum Reverse Leakage Current
50 nA
Maximum Zener Impedance
55 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933827820115::BZV55-B20 T/R::BZV55-B20 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZV55-B20,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
BZV55_SER
Product data sheet
Table 3.
[1]
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
[1]
Type number
BZV55-B2V4 to
BZV55-C75
Type number
BZV55-B2V4 to BZV55-C75
Symbol
I
I
P
T
Symbol
P
T
R
R
F
ZSM
stg
j
ZSM
tot
th(j-a)
th(j-sp)
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
t
Device mounted on a ceramic substrate of 10  10  0.6 mm.
Device mounted on a ceramic substrate of 10  10  0.6 mm.
p
= 100 s; square wave; T
Ordering information
Marking codes
Limiting values
Thermal characteristics
[1]
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
storage temperature
junction temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 5 — 26 January 2011
j
= 25 C prior to surge
Description
hermetically sealed glass surface-mounted
package; 2 connectors
Conditions
T
T
Conditions
in free air
amb
tp
 50 C
 50 C
Marking code
marking band
[1]
[1]
[2]
[2]
[1]
BZV55 series
Min
-
-
-
-
-
65
65
Min
-
-
Voltage regulator diodes
Typ
-
-
© NXP B.V. 2011. All rights reserved.
Max
250
see
Table 8
and
40
400
500
+200
+200
9
Max
380
300
Version
SOD80C
Unit
mA
W
mW
mW
C
C
Unit
K/W
K/W
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