BZX585-C4V7,135 NXP Semiconductors, BZX585-C4V7,135 Datasheet - Page 6
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BZX585-C4V7,135
Manufacturer Part Number
BZX585-C4V7,135
Description
DIODE ZENER 4.7V 300MW SOD523
Manufacturer
NXP Semiconductors
Datasheet
1.BZX585-C47115.pdf
(10 pages)
Specifications of BZX585-C4V7,135
Package / Case
SC-79, SOD-523
Voltage - Zener (nom) (vz)
4.7V
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
3µA @ 2V
Tolerance
±5%
Power - Max
300mW
Impedance (max) (zzt)
80 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
4.705 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
- 1.2 mV / K
Zener Current
200 mA
Power Dissipation
300 mW
Maximum Reverse Leakage Current
3 uA
Maximum Zener Impedance
80 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055843135
BZX585-C4V7 /T3
BZX585-C4V7 /T3
BZX585-C4V7 /T3
BZX585-C4V7 /T3
Table 2 Per type BZX585-B/C27 to B/C75
T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm
2. Solder point at cathode tab.
BZX585-
27
30
33
36
39
43
47
51
56
62
68
75
R
R
amb
B or C
th(j-a)
th(j-s)
XXX
SYMBOL
= 25 °C unless otherwise specified.
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Tol. ± 2 % (B)
MIN.
WORKING VOLTAGE
thermal resistance from junction to ambient
thermal resistance from junction to solder point
at I
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
MAX.
Ztest
V
Z
(V)
= 2 mA
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
Tol. ± 5 % (C) at I
MIN.
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
MAX.
PARAMETER
65
70
75
80
80
85
85
90
100
120
150
170
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
MAX.
r
dif
(Ω)
25
30
35
35
40
45
50
60
70
80
90
95
at I
TYP.
Ztest
= 2 mA
80
80
80
90
130
150
170
180
200
215
240
255
MAX.
2
Cu area at cathode tab.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
note 1
note 2
(see figs 3 and 4)
TEMP. COEFF.
at I
S
Ztest
Z
TYP.
(mV/K)
= 2 mA
CONDITIONS
50
50
45
45
45
40
40
40
40
35
35
35
at f = 1 MHz;
DIODE CAP.
V
C
R
MAX.
d
= 0 V
(pF)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
I
VALUE
ZSM
NON-REPETITIVE
350
PEAK REVERSE
65
(A) at t
CURRENT
MAX.
p
= 100 μs
UNIT
K/W
K/W