JANTX2N6768 International Rectifier, JANTX2N6768 Datasheet - Page 3

• Manufacturer Part Number: JANTX2N6768
• Description: TRANSISTOR
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of JANTX2N6768

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 400V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 14A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204AA
• Lead Free Status / Rohs Status: Not Compliant

ABSOLUTE MAXIMUM RATINGS ( T
ELECTRICAL CHARACTERISTICS @ T J = 25°C (Unless Otherwise Specified)
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
1 . R e p e t i t i v e R a t i n g : P u l s e w i d t h l i m i t e d b y m a x i m u m j u n c t i o n t e m p e r a t u r e .
2. @V
3 . P u l s e w i d t h < 300 µs; Duty Cycle < 2 %
4. See MIL-S-19500/543
BV
R
V
I
I
I
Q
Q
Q
t
t
t
t
V
t
R
R
R
DSS
G S S
G S S
D(on)
r
D ( o f f )
r
t r r
GS(th)
S D
DS(on)
thJC
thCS
thJA
G(on)
G S
Gd
DSS
I
I
I
P
V
E
I
T
T
D
D
D M
A R
D D
D
G S
A S
J
S T G
@ V
@ V
@ T
= 5 0 V , S t a r t i n g T
Drain-Source
Breakdown Voltage
S t a t i c D r a i n - t o - S o u r c e
On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain
Current
Gate -to-Source Leakage Forward
Gate -to-Source Leakage Reverse
On-state Gate Charge
Gate-to-Source Charge
G a t e - t o - D r a i n ( “ M i l l e r ” ) C h a r g e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
F a l l T i m e
Parameter
Diode Forward Voltage
Reverse Recovery Time
Parameter
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Parameter
GS
GS
C
= 10V, T
= 10V, T
= 25°C
Parameter
C
C
205 Crawford Street, Leominster, MA 01453 USA [phone] FAX [phone]
= 25°C
= 100°C Continuous Drain Current
J
= 25° C , L = 1 0 0 µH + 10%, R
C
= 25°C unless otherwise noted
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Operating Junction
Storage Temperature Range
Lead Temperature
Min.
Min.
Min.
200
2 . 0
55
30
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
8
1
1
Typ.
Typ.
0.21
Typ.
G
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
- - -
= 25 , Peak I
Max.
Max.
.085
.090
-100
0.83
Max.
250
100
115
190
170
130
950
2
4 . 0
1 . 9
25
22
60
35
48
- - -
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
L
300(.06 from case for 10 sec)
Units
= 3 0 A
°C/W
Units
Units
JANTXV, JANTX, 2N6766
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
-55 to 150
V
V
V
V
V
V
V
V
V
V
See note 4
V
See note 4
T
T
M o u n t i n g s u r f a c e f l a t ,
smooth, and greased
Typical socket mount
± 20
120
150
6 0
3 0
1 . 2
30
19
J
J
G S
G S
G S
DS
D S
D S
G S
G S
G S
D S
D D
= 2 5 ° C , I
Test Conditions
Test Conditions
= 2 5 ° C , I
4
4
= 1 6 0 V , V
= 1 6 0 V , V
= 100V
= 0 V , I
= 1 0 V , I
= 1 0 V , I
= V
= 20 V
= - 2 0 V
= 1 0 V , I
= 1 0 0 V , I
Test Conditions
G S
, I
D
D
=1.0 mA,
F
D
D
D
S
= 30 A,d i / d t<100A/µs
= 250 µA
D
= 1 9 A
= 3 0 A
= 30A
G S
G S
= 30 A
= 30A, R
= 0V
= 0 V , T
3
3
Units
W/°C
3
, V G S = 0 V
m J
°C
°C
W
G
A
A
A
V
A
J
= 125°C
=2.35
3