25AA010A-I/ST Microchip Technology, 25AA010A-I/ST Datasheet - Page 11

• Manufacturer Part Number: 25AA010A-I/ST
• Description: EEPROM (Electrically-Erasable PROM)
• Manufacturer: Microchip Technology

Specifications of 25AA010A-I/ST

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 1K (128 x 8)
• Speed: 10MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.6
The Write Status Register instruction (WRSR) allows the
user to write to the nonvolatile bits in the STATUS
register as shown in Table 2-2. See Figure 2-7 for the
WRSR timing sequence. Four levels of protection for the
array are selectable by writing to the appropriate bits in
the STATUS register. The user has the ability to write-
protect none, one, two or all four of the segments of the
array as shown in Table 2-3.
FIGURE 2-7:
© 2008 Microchip Technology Inc.
SCK
Note:
CS
SO
SI
Write Status Register Instruction
(WRSR)
An internal write cycle (T
sequence.
0
0
0
WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)
1
0
Instruction
2
0
3
WC
0
) is initiated on the rising edge of CS after a valid write STATUS register
4
0
5
High-Impedance
0
6
1
7
25AA010A/25LC010A
TABLE 2-3:
7
8
BP1
0
0
1
1
6
9
Data to STATUS Register
10
5
11
4
ARRAY PROTECTION
BP0
0
1
0
1
12
3
13
2
Array Addresses
Write-Protected
(60h-7Fh)
(40h-7Fh)
(00h-7Fh)
14
upper 1/4
upper 1/2
1
DS21832E-page 11
none
all
15
0