BZX84-A9V1,215 NXP Semiconductors, BZX84-A9V1,215 Datasheet - Page 5

• Manufacturer Part Number: BZX84-A9V1,215
• Description: DIODE VREG 9.1V 250MW SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BZX84-A9V1,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Zener (nom) (vz): 9.1V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 500nA @ 6V
• Tolerance: ±1%
• Power - Max: 250mW
• Impedance (max) (zzt): 15 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 9.1 V
• Voltage Tolerance: 1 %
• Voltage Temperature Coefficient: 5.5 mV / K
• Power Dissipation: 250 mW
• Maximum Reverse Leakage Current: 500 nA
• Maximum Zener Impedance: 15 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934014140215

Table 1 Per type BZX84-A/B/C2V4 to A/B/C24
T
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
BZX84-
j
= 25 °C unless otherwise specified.
Axxx
Bxxx
Cxxx
2.37
2.67
2.97
3.26
3.56
3.86
4.25
4.65
5.04
5.54
6.13
6.73
7.42
8.11
9.00
9.90
10.80
11.88
12.87
14.85
15.84
17.82
19.80
21.78
23.76
MIN.
Tol. ±1% (A)
2.43
2.73
3.03
3.34
3.64
3.94
4.35
4.75
5.16
5.66
6.27
6.87
7.58
8.29
9.20
10.10
11.11
12.12
13.13
15.15
16.16
18.18
20.20
22.22
24.24
MAX.
WORKING VOLTAGE
at I
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
Tol. ±2% (B)
MIN.
Ztest
V
Z
(V)
= 5 mA
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
MAX.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Tol. approx.
MIN.
±5% (C)
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
MAX.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
I
TYP.
Ztest
= 1 mA
DIFFERENTIAL
at
RESISTANCE
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
MAX.
r
dif
(Ω)
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
I
TYP. MAX.
Ztest
= 5 mA
at
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
MIN.
(see Figs 4 and 5)
TEMP. COEFF.
at I
S
Ztest
Z
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
TYP. MAX.
(mV/K)
= 5 mA
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
d
= 0 V
(pF)
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
NON-REPETITIVE
PEAK REVERSE
at t
T
CURRENT
amb
I
p
ZSM
MAX.
= 100 μs;
= 25 °C
(A)