BZV49-C47,115 NXP Semiconductors, BZV49-C47,115 Datasheet - Page 4
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BZV49-C47,115
Manufacturer Part Number
BZV49-C47,115
Description
DIODE ZENER 47V 1W SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.BZV49-C2V7115.pdf
(10 pages)
Specifications of BZV49-C47,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Voltage - Zener (nom) (vz)
47V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
50nA @ 32.9V
Tolerance
±5%
Power - Max
1W
Impedance (max) (zzt)
170 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
47 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
46.1 mV / K
Power Dissipation
1 W
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
170 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933606120115
BZV49-C47 T/R
BZV49-C47 T/R
BZV49-C47 T/R
BZV49-C47 T/R
Per type
T
BZV49-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
CXXX
= 25 °C unless otherwise specified.
MIN.
10.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11.4
WORKING
VOLTAGE
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
at I
V
Z
Ztest
(V)
MAX.
10.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
11.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
TYP.
DIFFERENTIAL
70
75
80
85
85
85
80
50
40
15
10
10
10
10
10
10
15
20
25
RESISTANCE
6
6
6
6
6
8
at I
r
dif
Ztest
(Ω)
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
10.4
12.4
14.4
16.4
18.4
see Figs 4 and 5
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
TEMP. COEFF.
S
Z
at I
TYP. MAX.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
+1.2
12.4
14.4
16.4
18.4
20.4
(mV/K)
11.4
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
Ztest
+0.2
+1.2
+2.5
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
0
0
0
0
0
0
0
3.7
4.5
5.3
6.2
7.0
8.0
9.0
CURRENT
I
Ztest
TEST
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(mA)
DIODE CAP.
at f = 1 MHz;
at V
C
MAX.
d
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
R
90
85
85
80
75
75
70
60
60
55
(pF)
= 0 V
I
CURRENT at
R
MAX.
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
REVERSE
REVERSE
VOLTAGE
(μA)
10.5
11.2
12.6
14.0
15.4
16.8
(V)
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
R
NON-REPETITIVE PEAK
REVERSE CURRENT
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
at t
T
amb
I
p
ZSM
MAX.
= 100 μs;
= 25 °C
(A)