BZV49-C4V7,115 NXP Semiconductors, BZV49-C4V7,115 Datasheet - Page 4
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BZV49-C4V7,115
Manufacturer Part Number
BZV49-C4V7,115
Description
DIODE ZENER 4.7V 1W SOT89
Manufacturer
NXP Semiconductors
Type
Voltage Regulatorr
Datasheet
1.BZV49-C2V7115.pdf
(10 pages)
Specifications of BZV49-C4V7,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Voltage - Zener (nom) (vz)
4.7V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
3µA @ 2V
Tolerance
±5%
Power - Max
1W
Impedance (max) (zzt)
80 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
4.7 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
- 1.4 mV / K
Power Dissipation
1 W
Maximum Reverse Leakage Current
3 uA
Maximum Zener Impedance
80 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Anode
Package Type
SOT-89
Zener Voltage (typ)
4.7V
Zener Test Current
5mA
Knee Impedance
80Ohm
Operating Temperature Classification
Military
Rev Curr
3uA
Mounting
Surface Mount
Pin Count
3 +Tab
Operating Temp Range
-65C to 150C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933605880115
BZV49-C4V7 T/R
BZV49-C4V7 T/R
BZV49-C4V7 T/R
BZV49-C4V7 T/R
Per type
T
BZV49-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
CXXX
= 25 °C unless otherwise specified.
MIN.
10.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11.4
WORKING
VOLTAGE
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
at I
V
Z
Ztest
(V)
MAX.
10.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
11.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
TYP.
DIFFERENTIAL
70
75
80
85
85
85
80
50
40
15
10
10
10
10
10
10
15
20
25
RESISTANCE
6
6
6
6
6
8
at I
r
dif
Ztest
(Ω)
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
10.4
12.4
14.4
16.4
18.4
see Figs 4 and 5
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
TEMP. COEFF.
S
Z
at I
TYP. MAX.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
+1.2
12.4
14.4
16.4
18.4
20.4
(mV/K)
11.4
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
Ztest
+0.2
+1.2
+2.5
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
0
0
0
0
0
0
0
3.7
4.5
5.3
6.2
7.0
8.0
9.0
CURRENT
I
Ztest
TEST
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(mA)
DIODE CAP.
at f = 1 MHz;
at V
C
MAX.
d
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
R
90
85
85
80
75
75
70
60
60
55
(pF)
= 0 V
I
CURRENT at
R
MAX.
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
REVERSE
REVERSE
VOLTAGE
(μA)
10.5
11.2
12.6
14.0
15.4
16.8
(V)
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
R
NON-REPETITIVE PEAK
REVERSE CURRENT
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
at t
T
amb
I
p
ZSM
MAX.
= 100 μs;
= 25 °C
(A)