BZV49-C6V8,115 NXP Semiconductors, BZV49-C6V8,115 Datasheet - Page 3
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BZV49-C6V8,115
Manufacturer Part Number
BZV49-C6V8,115
Description
DIODE ZENER 6.8V 1W SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.BZV49-C2V7115.pdf
(10 pages)
Specifications of BZV49-C6V8,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Voltage - Zener (nom) (vz)
6.8V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
2µA @ 4V
Tolerance
±5%
Power - Max
1W
Impedance (max) (zzt)
15 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
6.8 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
3 mV / K
Power Dissipation
1 W
Maximum Reverse Leakage Current
2 uA
Maximum Zener Impedance
15 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933605920115
BZV49-C6V8 T/R
BZV49-C6V8 T/R
BZV49-C6V8 T/R
BZV49-C6V8 T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
ELECTRICAL CHARACTERISTICS
Total series
T
2005 Feb 03
I
I
P
P
T
T
V
amb
F
ZSM
SYMBOL
SYMBOL
stg
j
tot
ZSM
F
Voltage regulator diodes
= 25 °C unless otherwise specified.
continuous forward current
non-repetitive peak reverse current t
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
forward voltage
PARAMETER
PARAMETER
T
T
t
T
p
p
j
amb
j
= 100 μs; square wave;
= 100 μs; square wave;
= 25 °C prior to surge
= 25 °C prior to surge; see Fig.2
= 25 °C; note 1
I
3
2
F
; thickness = 0.7 mm.
= 50 mA; see Fig.3
CONDITIONS
CONDITIONS
−
see Table
“Per type”
−
−
−65
−
MIN.
MAX.
1
BZV49 series
250
1
40
+150
150
Product data sheet
MAX.
UNIT
mA
W
W
°C
°C
V
UNIT