BZV49-C8V2,115 NXP Semiconductors, BZV49-C8V2,115 Datasheet - Page 6
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BZV49-C8V2,115
Manufacturer Part Number
BZV49-C8V2,115
Description
DIODE ZENER 8.2V 1W SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.BZV49-C2V7115.pdf
(10 pages)
Specifications of BZV49-C8V2,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Voltage - Zener (nom) (vz)
8.2V
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
700nA @ 5V
Tolerance
±5%
Power - Max
1W
Impedance (max) (zzt)
15 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
8.2 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
4.6 mV / K
Power Dissipation
1 W
Maximum Reverse Leakage Current
0.7 uA
Maximum Zener Impedance
15 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933605940115
BZV49-C8V2 T/R
BZV49-C8V2 T/R
BZV49-C8V2 T/R
BZV49-C8V2 T/R
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
GRAPHICAL DATA
2005 Feb 03
R
R
SYMBOL
handbook, halfpage
Voltage regulator diodes
th(j-tp)
th(j-a)
(1) T
(2) T
Fig.2
P ZSM
(W)
10
10
j
j
10
= 25 °C (prior to surge).
= 150 °C (prior to surge).
1
10
3
2
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
−1
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
1
(1)
(2)
duration (ms)
MBG801
10
6
2
; thickness = 0.7 mm.
note 1
handbook, halfpage
T
Fig.3
j
= 25 °C.
(mA)
300
I F
200
100
CONDITIONS
0
0.6
Forward current as a function of forward
voltage; typical values.
0.8
VALUE
BZV49 series
125
15
V F (V)
Product data sheet
MBG781
UNIT
K/W
K/W
1