MMBZ5231BLT1G ON Semiconductor, MMBZ5231BLT1G Datasheet - Page 2
![DIODE ZENER 5.1V 225MW SOT-23](/photos/1/38/13877/sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
MMBZ5231BLT1G
Manufacturer Part Number
MMBZ5231BLT1G
Description
DIODE ZENER 5.1V 225MW SOT-23
Manufacturer
ON Semiconductor
Specifications of MMBZ5231BLT1G
Voltage - Zener (nom) (vz)
5.1V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
5µA @ 2V
Power - Max
225mW
Impedance (max) (zzt)
17 Ohm
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Operating Temperature
-65°C ~ 150°C
Current, Forward
10 mA
Current, Reverse
20 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Zener
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
0.9 V
Voltage, Reverse
5.1 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
MMBZ5231BLT1GOS
MMBZ5231BLT1GOS
MMBZ5231BLT1GOSTR
MMBZ5231BLT1GOS
MMBZ5231BLT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBZ5231BLT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
MMBZ5231BLT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBZ5231BLT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBZ5231BLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
QUALIFICATION PLAN:
Reliability testing was performed on qualification vehicles chosen based on die size, voltage
rating, and run rates.
RELIABILITY RESULTS:
SOT-23
MMBT2369LT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
BAT54ALT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMBZ5270BLT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
Issue Date: 08 Jun 2009
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
1008 hrs
Interval:
Interval:
Interval:
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
15000 cyc
1000 cyc
1008 hrs
15000 cyc
1000 cyc
1008 hrs
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/6
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/4
0/240
0/6
0/89
0/240
0/6
0/90
0/160
0/4
0/60
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