AM29F800BB-70SC Spansion Inc., AM29F800BB-70SC Datasheet - Page 38

• Manufacturer Part Number: AM29F800BB-70SC
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.

Specifications of AM29F800BB-70SC

• Memory Size: 8Mbit
• Memory Configuration: 1M X 8 / 512K X 16
• Ic Interface Type: Parallel
• Access Time: 70ns
• Memory Case Style: SOP
• No. Of Pins: 44
• Peak Reflow Compatible (260 C): No
• Supply Voltage Max: 5.5V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

REVISION SUMMARY FOR AM29F800B
Revision B
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 µs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 µs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
to 12.5 V, with a V
typical values to TTL table. Revised CMOS typical
standby current (I
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
38
CC3
CC
).
ID
test condition of 5.0 V. Added
min and max values are 11.5
P R E L I M I N A R Y
Am29F800B
Erase and Programming Performance
Corrected word and chip programming times.
Revision C
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
Revision C+1
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations: Corrected the notes refer-
ence for t
100% tested. Changed t
ns device. Changed t
to 12 µs.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for t
These parameters are 100% tested. Changed t
t
word mode specification to 12 µs.
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
CP
specifications for 55 ns device. Changed t
WHWH1
and t
WHWH1
WHWH2
DS
and t
VIDR
word mode specification
. These parameters are
. This parameter is not
CP
WHWH1
specifications for 55
and t
WHWH2
WHWH1
DS
and
.